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Institution Date Title Author
臺大學術典藏 2019-03-11T08:01:16Z Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs Liu, C.W.;Chen, M.-C.;Li, K.-S.;Jong, C.-A.;Liu, S.-N.;Xie, M.-J.;Kuo, J.-Y.;Chen, H.-H.;Chou, Y.-C.;Chen, P.-G.;Tang, C.-H.;Fan, S.-T.;Lee, M.H.;Liao, M.-H.; Lee, M.H.; Fan, S.-T.; Tang, C.-H.; Chen, P.-G.; Chou, Y.-C.; Chen, H.-H.; Kuo, J.-Y.; Xie, M.-J.; Liu, S.-N.; Liao, M.-H.; Jong, C.-A.; Li, K.-S.; Chen, M.-C.; Liu, C.W.
淡江大學 2005-04-18 Bonding properties and their relation to residual stress and refractive index of amorphous Ta(N,O) films investigated by x-ray absorption spectroscopy Jan, J. C.; Babu, P. D.; Tsai, H. M.; Pao, C. W.; Chiou, J. W.; Ray, S. C.; Krishna Kumar, K. P.; 彭維鋒; Pong, W. F.; Tsai, M. H.; Jong, C. A.; Chin, T. S.
淡江大學 2005-04 Bonding properties and their relation to residual stress and refractive index of amorphous Ta(N,O) films investigated by x-ray absorption spectroscopy Jan, J. C.; Babu, P. D.; Tsai, H. M.; Pao, C. W.; Chiou, J. W.; Ray, S. C.; Krishna Kumar, K. P.; Pong, W. F.; Tsai, M.-H.; Jong, C. A.; Chin, T. S.

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