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"juang mh"的相关文件
显示项目 21-30 / 34 (共4页)
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| 國立交通大學 |
2014-12-08T15:04:50Z |
FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:47Z |
CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALING
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:43Z |
ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:40Z |
SHALLOW N(+)P JUNCTION FORMATION BY IMPLANTING P+ IONS INTO THIN CO FILMS AND LASER PROCESSING
|
CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:04:34Z |
FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATE
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LIN, CT; JUANG, MH; CHU, CH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:24Z |
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
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JUANG, MH; LIN, CT; JAN, ST; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:21Z |
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES
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CHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L |
| 國立交通大學 |
2014-12-08T15:03:52Z |
SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
|
JUANG, MH; LIN, CT; CHENG, HC |
显示项目 21-30 / 34 (共4页)
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