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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"juang mh"的相關文件
顯示項目 11-20 / 34 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:05:05Z |
GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHOD
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CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMS
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON
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JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSING
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JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:55Z |
FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:51Z |
NOVEL EFFECTS OF HEATING RATE ON THE ACTIVATION RECRYSTALLIZATION OF BORON-IMPLANTED SI SUBSTRATES
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JUANG, MH; CHENG, HC |
顯示項目 11-20 / 34 (共4頁)
<< < 1 2 3 4 > >>
每頁顯示[10|25|50]項目
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