|
English
|
正體中文
|
简体中文
|
總筆數 :0
|
|
造訪人次 :
51176505
線上人數 :
709
教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
|
|
|
"juang mh"的相關文件
顯示項目 16-25 / 34 (共4頁) << < 1 2 3 4 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:04:57Z |
INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON
|
JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSING
|
JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:55Z |
FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:51Z |
NOVEL EFFECTS OF HEATING RATE ON THE ACTIVATION RECRYSTALLIZATION OF BORON-IMPLANTED SI SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:50Z |
FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:47Z |
CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALING
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:43Z |
ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
顯示項目 16-25 / 34 (共4頁) << < 1 2 3 4 > >> 每頁顯示[10|25|50]項目
|