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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:04:40Z SHALLOW N(+)P JUNCTION FORMATION BY IMPLANTING P+ IONS INTO THIN CO FILMS AND LASER PROCESSING CHENG, HC; JUANG, MH
國立交通大學 2014-12-08T15:04:34Z FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATE LIN, CT; JUANG, MH; CHU, CH; CHENG, HC
國立交通大學 2014-12-08T15:04:24Z THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION JUANG, MH; LIN, CT; JAN, ST; CHENG, HC
國立交通大學 2014-12-08T15:04:21Z NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES CHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L
國立交通大學 2014-12-08T15:03:52Z SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING JUANG, MH; LIN, CT; CHENG, HC
國立交通大學 2014-12-08T15:03:48Z A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION CHENG, HC; JUANG, MH; LIN, CT; HUANG, LM
國立交通大學 2014-12-08T15:03:46Z FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS LIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC
國立交通大學 2014-12-08T15:03:35Z SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS JUANG, MH; LIN, CT; CHENG, HC
國立交通大學 2014-12-08T15:03:30Z EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC

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