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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"juang mh"的相關文件
顯示項目 6-15 / 34 (共4頁)
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| 國立交通大學 |
2014-12-08T15:44:34Z |
Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperatures
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Hwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:31Z |
Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates
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Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
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Hwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:41:20Z |
Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures
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Shye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:38:50Z |
Fabrication of trench-gate power MOSFETs by using a dual doped body region
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Juang, MH; Chen, WT; Ou-Yang, CI; Jang, SL; Lin, MJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:05:05Z |
GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHOD
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CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMS
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATE
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JUANG, MH; CHENG, HC |
顯示項目 6-15 / 34 (共4頁)
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