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Showing items 1-34 of 34 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:48:55Z |
A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal
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Lai, WK; Liu, HW; Juang, MH; Chen, NC; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Effects of CoSi2 on p(+) polysilicon gates fabricated by BF2+ implantation into CoSi amorphous Si bilayers
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Cheng, HC; Lai, WK; Liu, HW; Juang, MH |
| 國立交通大學 |
2014-12-08T15:46:51Z |
Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
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Juang, MH; Hu, MC; Yang, CJ |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Effects of rapid thermal annealing on cobalt silicided p(+) poly-Si gates fabricated by BF2+ implantation into bilayered CoSi/a-Si films
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Lai, WK; Liu, HW; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:46:12Z |
Suppression of boron penetration for p(+) stacked poly-Si gates by using inductively coupled N-2 plasma treatment
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Cheng, HC; Lai, WK; Hwang, CC; Juang, MH; Chu, SC; Liu, TF |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Effect of rapid thermal annealed TiN barrier layer on BST capacitors prepared by RF magnetron cosputter system at low substrate temperatures
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Hwang, CC; Jaing, CC; Lai, MJ; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:31Z |
Low-temperature process to improve the leakage current of (Ba, Sr)TiO3 films on Pt/TiN/Ti/Si substrates
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Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:44:19Z |
Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
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Hwang, CC; Juang, MH; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:41:20Z |
Effects of post-oxygen plasma treatment on Pt/(Ba,Sr)TiO3/Pt capacitors at low substrate temperatures
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Shye, DC; Hwang, CC; Lai, MJ; Jaing, CC; Chen, JS; Huang, S; Juang, MH; Chiou, BS; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:38:50Z |
Fabrication of trench-gate power MOSFETs by using a dual doped body region
|
Juang, MH; Chen, WT; Ou-Yang, CI; Jang, SL; Lin, MJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:05:05Z |
GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111)SI AT LOW ANNEALING TEMPERATURES BY A NONULTRAHIGH VACUUM METHOD
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CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:05:00Z |
EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .2. THIN COBALT FILMS
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P+-N JUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
NOVEL ANNEALING SCHEME FOR FABRICATING HIGH-QUALITY TI-SILICIDED SHALLOW N+P JUNCTION BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATE
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:57Z |
INFLUENCE OF IMPLANT CONDITION ON THE TRANSIENT-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SILICON
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JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
SUPPRESSION OF ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON IN SILICON BY LASER PROCESSING
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JUANG, MH; WAN, FS; LIU, HW; CHENG, KL; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:56Z |
FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATES
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:55Z |
FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:51Z |
NOVEL EFFECTS OF HEATING RATE ON THE ACTIVATION RECRYSTALLIZATION OF BORON-IMPLANTED SI SUBSTRATES
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:50Z |
FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:47Z |
CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALING
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:43Z |
ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATE
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JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:40Z |
SHALLOW N(+)P JUNCTION FORMATION BY IMPLANTING P+ IONS INTO THIN CO FILMS AND LASER PROCESSING
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CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:04:34Z |
FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATE
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LIN, CT; JUANG, MH; CHU, CH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:24Z |
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
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JUANG, MH; LIN, CT; JAN, ST; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:21Z |
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES
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CHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L |
| 國立交通大學 |
2014-12-08T15:03:52Z |
SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
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JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:48Z |
A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION
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CHENG, HC; JUANG, MH; LIN, CT; HUANG, LM |
| 國立交通大學 |
2014-12-08T15:03:46Z |
FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
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LIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:35Z |
SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS
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JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:30Z |
EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
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LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
Showing items 1-34 of 34 (1 Page(s) Totally)
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