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Showing items 21-34 of 34 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:50Z |
FILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:47Z |
CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING OF COBALT FILMS ON SI(111)
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
FORMATION OF SELF-ALIGNED TISI2 P+-N JUNCTIONS BY IMPLANTING BF2+ IONS THROUGH THIN TI OR SIO2 FILM ON SI SUBSTRATE RAPID THERMAL ANNEALING
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:46Z |
CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:43Z |
ACTIVATION MECHANISM OF IMPLANTED BORON IN A SI SUBSTRATE
|
JUANG, MH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:40Z |
SHALLOW N(+)P JUNCTION FORMATION BY IMPLANTING P+ IONS INTO THIN CO FILMS AND LASER PROCESSING
|
CHENG, HC; JUANG, MH |
| 國立交通大學 |
2014-12-08T15:04:34Z |
FORMATION OF EXCELLENT SHALLOW N+P JUNCTIONS BY AS+ IMPLANTATION INTO THIN COSI FILMS ON SI SUBSTRATE
|
LIN, CT; JUANG, MH; CHU, CH; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:24Z |
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
|
JUANG, MH; LIN, CT; JAN, ST; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:04:21Z |
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3/AR POST-ETCHING-TREATED N-SI SUBSTRATES
|
CHENG, HC; CHEN, YE; JUANG, MH; YEN, PW; LIN, L |
| 國立交通大學 |
2014-12-08T15:03:52Z |
SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
|
JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:48Z |
A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION
|
CHENG, HC; JUANG, MH; LIN, CT; HUANG, LM |
| 國立交通大學 |
2014-12-08T15:03:46Z |
FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
|
LIN, CT; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:35Z |
SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS
|
JUANG, MH; LIN, CT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:30Z |
EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
|
LIN, CT; CHAO, CH; JUANG, MH; JAN, ST; CHOU, PF; CHENG, HC |
Showing items 21-34 of 34 (2 Page(s) Totally)
1 2 > >>
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