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"jung hui tsai"

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Showing items 226-235 of 294  (30 Page(s) Totally)
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Institution Date Title Author
國立高雄師範大學 2000 Investigation of AlGaAs/GaAs/InGaAs Resonant-Tunneling Base Transistor (RTBT) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 On the Temperature dependence of InGaP/GaAs Heterostructure-Emitter Bipolar Transistor Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 2000 A New AlGaAs/GaAs/InGaAs Pseudomorphic Heterostructure with Multiple S-shaped Switching Phenomena Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor (HEBT) with a pseudomorphic InGaAs/GaAs quantum-well base Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Superlatticed negative differential-resistance heterojunction bipolar transistor Jung-Hui Tsai;Shiou-Ying Cheng;Po-Hung Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT) Jung-Hui Tsai;Shiou-Ying Cheng;Wen-Lung Chang;Hsi-Jen Pan;Yung-Hsin Shie;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1999 Recombination Current Effect of Heterostructure-Emitter Bipolar Transistors (HEBT's) Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Investigation of Resonant Tunneling Bipolar Transistor with Bi-directional Negative-Differential-Resistance Phenomena Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic Quantum-Well Base Jung-Hui Tsai; 蔡榮輝
國立高雄師範大學 1999 Surface Recombination Effect in GaAs-Based Heterostructure-Emitter and Heterostructure-Base Transistors (HEHBT's) Jung-Hui Tsai; 蔡榮輝

Showing items 226-235 of 294  (30 Page(s) Totally)
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