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显示项目 101-150 / 294 (共6页)
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机构	日期	题名	作者
國立高雄師範大學	2008	Comparison of heterstructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures	Jung-Hui Tsai; I-Hsuan Hsu;Chien-Ming Li;Ning-Xing Su;Yi-Zhen Wu;Yin-Shan Huang; 蔡榮輝
國立高雄師範大學	2008	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Electrical properties of InP/InGaAs pnp heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Wen-Chau Liu;Der-Feng Guo;Yu-Chi Kang;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2008	Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages	Jung-Hui Tsai;Tzu-Yen Wen;King-Poul Zhu; 蔡榮輝
國立高雄師範大學	2008	Low-dark-current heterojunction phototransistors with long-term stable passivation induced by neutralized (NH4)2S treatment	Jung-Hui Tsai;Shao-Yen Chiu;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2008	Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs	Jung-Hui Tsai;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2008	Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學	2008	Investigation on electro-optical switch using heterojunction phototransistors with double emitter	Jung-Hui Tsai;Shao-Yen Chiu;Chung-Hsien Wu;Wen-Shiung Lou; 蔡榮輝
國立高雄師範大學	2008	Investigation of field-plate gate on heterojunction doped-channel field effect transistors	Jung-Hui Tsai;Meng-Kai Hsu;Shao-Yen Chiu;Chung-Hsien Wu;Kang-Ping Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2008	InGaP/GaAs pnp heterojunction bipolar transistor with d-doped sheet between base-emitter junction	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Chien-Ming L;Yi-Zhen Wu;Ning-Xing Su;Yin-Shan Huang; 蔡榮輝
國立高雄師範大學	2008	Application of Schottky bulk-layer design on double-heterojunction pseudomorphic AlGaAs/InGaAs/AlGaAs high electron mobility transistors (DH-HEMTs)	Jung-Hui Tsai;Meng-Kai Hsu;Shao-Yen Chiu;Chung-Hsien Wu;Kum-Chieh Liang;Kang-Ping Liu;Tze-Shuan Huang;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2008	Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors	Jung-Hui Tsai;Kuei-Yi Chu;Shiou-Ying Cheng;Tzu-Pin Chen;Li-Yang Chen;Tsung-Han Tsai;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2008	Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure	Jung-Hui Tsai;T. P. Chen;W. H. Chen;K. Y. Chu;L. Y. Chen;C. J. Lee;S. Y. Cheng;W. C. Liu; 蔡榮輝
國立高雄師範大學	2008	Improved formal passivations of Pseudomorphic high electron mobility transistors	Jung-Hui Tsai;L. Y. Chen;S. Y. Cheng;K. Y. Chu;T. P. Chen;T. H. Tsai;W. C. Liu; 蔡榮輝
國立臺灣海洋大學	2008	High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimensional dipoles	Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu; Jung-Hui Tsai; Wen-Shiung Lour
國立臺灣海洋大學	2008	InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet Between Base-Emitter Junction	Jung Hui Tsai; Shao Yen Chiu; Wen Shiung Lour; Chien Ming Li; Yi Zhen Wu; Ning Xing Su; Yin Shan Huang
國立臺灣海洋大學	2008	Investigation on Electro-Optical Switch Using Heterojunction Phototransistors with Double Emitter	Shao-Yen Chiu; Chung-Hsien Wu; Jung-Hui Tsai; Wen-Shiung Lour
國立臺灣海洋大學	2008	Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor	Li-Yang Chen; Shiou-Ying Cheng; Wen-Shiung Lour; Jung-Hui Tsai; Der-Feng Guo; Tsung-Han Tsai; Tzu-Pin Chen; Yi-Chun Liu; Wen-Chau Liu
國立臺灣海洋大學	2008	Investigation of Field-Plate Gate on Heterojunction Doped-Channel Field Effect Transistors	Meng-Kai Hsu; Shao-Yen Chiu; Chung-Hsien Wu; Kang-Ping Liu; Jung-Hui Tsai; Wen-Shiung Lour
國立高雄師範大學	2007-08-01	積體化摻雜通道擬晶性異質結構場效電晶體之研究及邏輯電路應用(I)	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2007	Integration of n- and p-channel InGaP/InGaAs doped-channel pseudomorphic HFETs	Jung-Hui Tsai;Chien-Ming Li;Wen-Chau Liu;Der-Feng Guo;Shao-Yen Chiu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure	Jung-Hui Tsai;I-Hsuan Hsu;Tzu-Yen Weng;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2007	Promoted potential of heterojunction phototransistor for low-power photodetection by surface sulfur treatment	Jung-Hui Tsai;Wei-Tien Chen;Hon-Rung Chen;Shao-Yen Chiu;Meng-Kai Hsu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Shiou-Ying Cheng;Der-Feng Guo;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristics improvement for an npn-heterostructure Optoelectronic switch by introducing a wide-gap layer in the collector	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Der-Feng Guo;Chih-Hung Yen;Wen-Shiung Lour;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure	Jung-Hui Tsai;Tzu-Pin Chen;Ssu-I Fu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate	Jung-Hui Tsai;Meng-Kai Hsu;Hon-Rung Chen;Shao-Yen Chiu;Wei-Tien Chen;Wen-Chau Liu;Wen-Shiung Lour; 蔡榮輝
國立高雄師範大學	2007	A pnpn GaAs-InGaAs optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Chien-Ming Li; 蔡榮輝
國立高雄師範大學	2007	An Optoelectronic Switch with Multiple Operation States	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學	2007	A New PT-Oxide-InALP-Based Schottky Diode Hydrogen Sensor	Jung-Hui Tsai;Yan-Ying Tsai;Shiou-Ying Cheng;Der-Feng Guo;Huey-Ing Chen;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Hydrogen Sensing Characteristics of a Pd/GaAs Semiconductor Transistor-Type Sensor	Jung-Hui Tsai;C. W. Hung;H. I. Chen;D. F. Guo;S. Y. Cheng;Y. Y. Tsai;T. P. Chen;W. C. Liu; 蔡榮輝
國立高雄師範大學	2007	Optoelectronic switch with S-shaped negative differential resistance	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	A multiple-operation-state optoelectronic switch	Jung-Hui Tsai;Der-Feng Guo;Ming-Yue Fu; 蔡榮輝
國立高雄師範大學	2007	Investigation on heterostructural optoelectronic switches	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Chih-Hung Yeng;Po-Hsien Lai;Ssu-Yi Fu;Ching-Wen Hung;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Improved performance of a composite passivate heterojunction bipolar transistor (HBT)	Jung-Hui Tsai;Ssu-Yi Fu;Tzu-Pin Chen;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Sulphur passivation on an InGaP/InGaAs/GaAs Pseudomorphic high electron mobility transistor (PHEMT)	Jung-Hui Tsai;Po-Hsien Lai;Yi-Wen Huang;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2007	Characteristic of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT	Jung-Hui Tsai;Der-Feng Guo;Yu-Chi Kang;Tzu-Yen Weng; 蔡榮輝
國立臺灣海洋大學	2007	Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立臺灣海洋大學	2007	Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH4)2S Treatment	Shao-Yen Chiu;Hon-Rung Chen;Wei-Tien Chen;Meng-Kai Hsu;Wen-Chau Liu;Jung-Hui Tsai;Wen-Shiung Lour
國立臺灣海洋大學	2007	Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors	Der-Feng Guo;Chih-Hung Yen;Jung-Hui Tsai;Wen-Shiung Lour;Wen-Chau Liu
國立高雄師範大學	2006-12	具有多重負微分電阻之磷化銦／砷化銦鎵分裂迷你帶結構共振穿透二極體	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2006-08	極高閘極能障高度及導通電壓砷化鎵系列場效電晶體之製造與研究	蔡榮輝; Jung-Hui Tsai
國立高雄師範大學	2006	Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions	Jung-Hui Tsai;Yu-Chi Kang;I-Hsuan Hsu;Tzu-Yen Wen; 蔡榮輝
國立高雄師範大學	2006	Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)	Jung-Hui Tsai;Chun-Wei Chen;Po-Hsien Lai;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Application of double camel-like gate structures for GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltag	Jung-Hui Tsai;Shao-Yen Chiu;Wen-Shiung Lour;Der-Feng Guo;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學	2006	Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor	Jung-Hui Tsai;T. P. Chen;S. I. Fu;W. S. Lour;. F. Guo; S. Y. Cheng;W. C. Liu; 蔡榮輝
國立高雄師範大學	2006	DC performance of InP/InGaAs pnp heterostructure-emitter bipolar transistor	Jung-Hui Tsai;Yu-Chi Kang; 蔡榮輝
國立高雄師範大學	2006	Investigation of InP/InGaAs pnp d-doped heterojunction bipolar transistor with extremely low offset voltage	Jung-Hui Tsai;Yu-Chi Kang;I-Hsuan Hsu;Tzu-Yen Weng; 蔡榮輝
國立高雄師範大學	2006	Investigation of an InGaP/GaAs/InGaAs step-emitter bipolar transistor	Jung-Hui Tsai;Der-Feng Guo;Tzu-Yen Weng;Ching-Han Wu; 蔡榮輝

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