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Showing items 1-14 of 14  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-02T05:58:48Z Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP
國立交通大學 2014-12-08T15:04:11Z LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ
國立交通大學 2014-12-08T15:04:04Z CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ
國立交通大學 2014-12-08T15:04:02Z NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ
國立交通大學 2014-12-08T15:03:50Z EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES LIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD
國立交通大學 2014-12-08T15:03:48Z EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY
國立交通大學 2014-12-08T15:03:46Z FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION LIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP
國立交通大學 2014-12-08T15:03:44Z CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP
國立交通大學 2014-12-08T15:03:39Z QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE CHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC
國立交通大學 2014-12-08T15:03:13Z ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC
國立交通大學 2014-12-08T15:02:53Z Light emission from the porous boron delta-doped Si superlattice Chang, TC; Yeh, WK; Hsu, MY; Chang, CY; Lee, CP; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ
國立交通大學 2014-12-08T15:02:52Z Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition Chang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ
國立交通大學 2014-12-08T15:02:43Z Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor deposition Chang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ
國立交通大學 2014-12-08T15:01:31Z Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP

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