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Showing items 1-14 of 14 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:48Z |
Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
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Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:04Z |
CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
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CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:02Z |
NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
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CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ |
| 國立交通大學 |
2014-12-08T15:03:50Z |
EFFECT OF BORON DOPING ON THE STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON FILMS GROWN AT REDUCED PRESSURES
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LIN, HC; LIN, HY; CHANG, CY; JUNG, TG; WANG, PJ; DENG, RC; LIN, JD |
| 國立交通大學 |
2014-12-08T15:03:48Z |
EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS
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LIN, HC; CHANG, CY; CHEN, WH; TSAI, WC; CHANG, TC; JUNG, TG; LIN, HY |
| 國立交通大學 |
2014-12-08T15:03:46Z |
FABRICATION OF P-CHANNEL POLYCRYSTALLINE SI1-XGEX THIN-FILM TRANSISTORS BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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LIN, HC; JUNG, TG; LIN, HY; CHANG, CY; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:39Z |
QUANTUM CONFINEMENT EFFECTS OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
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CHANG, TC; CHANG, CY; JUNG, TG; CHEN, PA; TSAI, WC; WANG, PJ; CHEN, YF; PAN, SC |
| 國立交通大學 |
2014-12-08T15:03:13Z |
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Light emission from the porous boron delta-doped Si superlattice
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Chang, TC; Yeh, WK; Hsu, MY; Chang, CY; Lee, CP; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:02:52Z |
Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
|
Chang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:02:43Z |
Uniformity of epilayer grown by ultrahigh-vacuum chemical vapor deposition
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Chang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:01:31Z |
Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition
|
Tsai, WC; Chang, CY; Jung, TG; Chang, TC; Lin, HC; Chen, LP |
Showing items 1-14 of 14 (1 Page(s) Totally)
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