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Institution Date Title Author
臺大學術典藏 2018-09-10T03:50:56Z SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology L.-H. Lu; S. Mohammadi; Z. Ma; G. E. Ponchak; S. A. Alterovitz; K. M. Strohm; J.-K. Luy; P. Bhattacharya; L. P. B. Katehi; LIANG-HUNG LU

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