臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:41:36Z	Compact MOS/Bipolar Charge-Control Model of Partially-Depleted SOI CMOS Devices for VLSI Circuit Simulation---SOI-Technology (ST)-SPICE	J. B. Kuo; K. W. Su; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T07:08:19Z	CMOS VLSI Engineering: Silicon-on-Insulator (SOI)	J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:16Z	Analysis of Fringing Electric Field Related Capacitance Behavior of Narrow-Channel FD SOI NMOS Devices Using 3D Simulation	C. C. Chen; J. B. Kuo; K. W. Su; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Partitioned gate tunnelling current model considering distributed effect for CMOS devices with ultra-thin (1 nm) gate oxide	C. H. Lin; J. B. KUO; K. W. Su; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Gate capacitances behavior of nanometer FD SOI CMOS devices with HfO2 high-k gate dielectric considering vertical and fringing displacement effects using 2-D simulation	Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏	2018-09-10T06:02:15Z	Analysis of the gate-source/drain capacitance behavior of a narrow-channel FD SOINMOS device considering the 3-D fringing capacitances using 3-D simulation	C. C. Chen; J. B. Kuo; K. W. Su,; S. Liu; JAMES-B KUO
臺大學術典藏	2018-09-10T05:26:48Z	CGS Capacitance Phenomenon of 100nm FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Vertical and Fringing Displacement Effects	Y. S. Lin; C. H. Lin; J. B. Kuo; K. W. Su; JAMES-B KUO
國立臺灣海洋大學	2018-09	Exploring the Emergence of the Self-Q-Switching in Diode-Pumped Yb:KGW Monolithic Lasers	T. L. Huang; H. C. Liang; K. W. Su; Y. F. Chen
國立臺灣海洋大學	2017-12	High-peak-power large-angular-momentum beams generated from passively Q-switched geometric modes with astigmatic transformation	W. D. Chen; Y. F. Chen; C. C. Chang; C. Y. Lee; C. L. Sung; J. C. Tung; K. W. Su; H. C. Liang; G. Zhang
國立臺灣海洋大學	2017-07	Scaling output energy in a diode-end-pumped passively Q-switched laser with a flat-flat resonator	K. W. Su; C. Y. Tang; Y. J. Huang; H. C. Liang; Y. F. Chen

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