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| 臺大學術典藏 |
2018-09-10T07:25:35Z |
3510-V 390-mΩ · cm2 4H-SiC lateral JFET on a semi-insulating substrate
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Huang, C.-F.; Kan, C.-L.; Wu, T.-L.; Lee, M.-G.; Liu, Y.-Z.; Lee, K.-Y.; Zhao, F.; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T07:25:34Z |
High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
|
KUNG-YEN LEE;Zhao, F.;Lee, K.-Y.;Liu, Y.-Z.;Lee, M.-C.;Wu, T.-L.;Kan, C.-L.;Huang, C.-F.; Huang, C.-F.; Kan, C.-L.; Wu, T.-L.; Lee, M.-C.; Liu, Y.-Z.; Lee, K.-Y.; Zhao, F.; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T07:25:34Z |
High voltage lateral 4H-SiC JFETs on a semi-insulating substrate
|
KUNG-YEN LEE;Zhao, F.;Lee, K.-Y.;Liu, Y.-Z.;Lee, M.-C.;Wu, T.-L.;Kan, C.-L.;Huang, C.-F.; Huang, C.-F.; Kan, C.-L.; Wu, T.-L.; Lee, M.-C.; Liu, Y.-Z.; Lee, K.-Y.; Zhao, F.; KUNG-YEN LEE |
Showing items 1-3 of 3 (1 Page(s) Totally)
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