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Showing items 11-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:03:25Z |
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
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UENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:25Z |
EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES
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KANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:12Z |
EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES
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CHENG, HC; UENG, SY; WANG, PW; KANG, TK; CHAO, TS |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching
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Kang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:33Z |
A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching
|
Cheng, HC; Kang, TK; Ku, TK; Dai, BT; Chen, LP |
| 國立交通大學 |
2014-12-08T15:01:16Z |
Charging damages to gate oxides in a helicon O-2 plasma
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
Showing items 11-16 of 16 (1 Page(s) Totally)
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