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Showing items 51-66 of 66 (3 Page(s) Totally)
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| 國立成功大學 |
2004-08-23 |
Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
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Kao, C. J.; Sheu, Jinn-Kong; Lai, Wei-Chi; Lee, Min-Lum; Chen, M. C.; Chi, Gou-Chung |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, Shoou-Jinn; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chang, W. H.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-08-01 |
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-05 |
Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
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Yeh, L. S.; Lee, M. L.; Sheu, Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin |
| 國立成功大學 |
2003-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
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Sheu, Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Tsa, J. M. |
| 國立成功大學 |
2003-04-28 |
GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
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Lee, M. L.; Sheu, J. K.; Lai, W. C.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chen, M. G.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. M. |
| 國立成功大學 |
2003-04 |
GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
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Chang, Shoou-Jinn; Lee, M. L.; Sheu, Jinn-Kong; Lai, W. C.; Su, Yan-Kuin; Chang, C. S.; Kao, C. J.; Chi, Gou-Chung; Tsai, J. A. |
| 國立成功大學 |
2003 |
Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer
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Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Chang, S. J.; Su, Y. K.; Chen, M. G.; Kao, C. J.; Tsai, J. M.; G.C.Chi |
| 國立成功大學 |
2003 |
Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers
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Kao, C. J.; Chang, S. J.; Su, Y. K.; Wu, L. W.; �Sheu, �Jinn-Kong; Wen, T. C.; Lai, W. C.; Tsai, J. M.; S.C. Chen |
| 國立成功大學 |
2003 |
Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer
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Chang, S. J.; Lee, M. L.; �Sheu, �Jinn-Kong; Lai, W. C.; Su, Y. K.; Chang, C. S.; Kao, C. J.; Chi, G. C.; Tsai, J. M. |
| 國立成功大學 |
2003 |
Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer
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�Sheu, �Jinn-Kong; Kao, C. J.; Lee, M. L.; Lai, W. C.; Yeh, L. S.; Chi, G. C.; Chang, S. J.; Su, Y. K.; Tsai, J. M. |
| 國立成功大學 |
2002-12 |
GaN p-n junction diode formed by Si ion implantation into p-GaN
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Lee, M. L.; Sheu, Jinn-Kong; Yeh, L. S.; Tsai, M. S.; Kao, C. J.; Tun, Chun-Ju; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 國立成功大學 |
2002-11-25 |
Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN
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Sheu, Jinn-Kung; Lee, M. L.; Yeh, L. S.; Kao, C. J.; Tun, Chun-Ju; Chen, M. G.; Chi, Gou-Chung; Chang, Shoou-Jinn; Su, Yan-Kuin; Lee, C. T. |
| 國立成功大學 |
2002-08 |
Characterization of Si implants in p-type GaN
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Sheu, Jinn-Kung; Lee, M. L.; Tun, Chun-Ju; Kao, C. J.; Yeh, L. S.; Chang, Shoou-Jinn; Chi, Gou-Chung |
| 國立成功大學 |
2002 |
Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure
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Yeh, L. S.; Lee, M. L.; �Sheu, �Jinn-Kong; Chen, M. G.; Kao, C. J.; Chi, G. C.; Chang, S. J.; Su, Y. K. |
| 淡江大學 |
1995-06 |
Time series prediction based on a novel neuro-fuzzy system
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蘇木春; Su, Mu-chun; Kao, C. J. |
Showing items 51-66 of 66 (3 Page(s) Totally)
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