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Institution	Date	Title	Author
國立成功大學	2023	Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation	Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications	Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory	Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, P.-H.;Tseng, H.-C.;Liao, H.-T.;Chou, Y.-W.;Chiu, M.-Y.;Chen, Y.-Q.
國立成功大學	2023	Exploring Performance and Reliability Behavior of Nanosheet Channel Thin-Film Transistors under Independent Dual Gate Bias Operation	Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Chen, Y.-Q.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel	Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor	Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology	Chiang, H.-L.;Hadi, R.A.;Wang, J.-F.;Han, Han H.-C.;Wu, J.-J.;Hsieh, Hsieh H.-H.;Horng, J.-J.;Chou, W.-S.;Lien, B.-S.;Chang, Chang C.-H.;Chen, Y.-C.;Wang, Y.-H.;Chen, T.-C.;Liu, J.-C.;Liu, Y.-C.;Chiang, M.-H.;Kao, Kao K.-H.;Pulicherla, B.;Cai, J.;Chang, Chang C.-S.;Su, K.-W.;Cheng, K.-L.;Yeh, T.-J.;Peng, Y.-C.;Enz, C.;Chang, M.-C.F.;Chang, M.-F.;Wong, H.-S.P.;Radu, I.P.
國立成功大學	2023	First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure	Yu, X.-R.;Hsieh, C.-C.;Chuang, M.-H.;Chiu, M.-Y.;Sun, T.-C.;Geng, W.-Z.;Chang, W.-H.;Shih, Y.-J.;Lu, W.-H.;Chang, W.-C.;Lin, Y.-C.;Pai, Y.-C.;Lai, C.-Y.;Chuang, M.-H.;Dei, Y.;Yang, C.-Y.;Lu, H.-Y.;Lin, N.-C.;Wu, C.-T.;Kao, Kao K.-H.;Ma, W.C.-Y.;Lu, D.D.;Lee, Y.-J.;Luo, G.-L.;Chiang, M.-H.;Maeda, T.;Wu, Wu W.-F.;Li, Y.-M.;Hou, T.-H.
國立成功大學	2023	Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications	Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y.
國立成功大學	2023	MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization	Lin, W.-C.;Huang, Huang H.-P.;Kao, Kao K.-H.;Chiang, M.-H.;Lu, D.;Hsu, W.-C.;Wang, Y.-H.;Ma, W.C.-Y.;Tsai, H.-H.;Lee, Y.-J.;Chiang, H.-L.;Wang, J.-F.;Radu, I.
國立成功大學	2022	First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO Gate Dielectric	Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, J.-H.;Wu, P.-H.;Chang, J.-C.;Yen, C.-L.;Tseng, H.-C.;Liao, H.-T.;Chou, Y.-W.;Chiu, M.-Y.;Chen, Y.-Q.
國立成功大學	2022	Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing	Ma, W.C.-Y.;Su, C.-J.;Lee, Y.-J.;Kao, Kao K.-H.;Chang, T.-H.;Chang, J.-C.;Wu, P.-H.;Yen, C.-L.;Lin, J.-H.
國立成功大學	2022	First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications	Chang, S.-W.;Lu, T.-H.;Yang, C.-Y.;Yeh, C.-J.;Huang, M.-K.;Meng, C.-F.;Chen, P.-J.;Chang, T.-H.;Chang, Y.-S.;Jhu, Jhu J.-W.;Hong, T.-C.;Ke, C.-C.;Yu, X.-R.;Lu, W.-H.;Baig, M.A.;Cho, T.-C.;Sung, P.-J.;Su, C.-J.;Hsueh, F.-K.;Chen, B.-Y.;Hu, Hu H.-H.;Wu, C.-T.;Lin, K.-L.;Ma, W.C.-Y.;Lu, D.D.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Huang, K.-P.;Chen, K.-M.;Li, Y.;Samukawa, Samukawa S.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Lee, W.-H.;Li, J.-Y.;Shieh, J.-M.;Tarng, J.-H.;Wang, Y.-H.;Yeh, W.-K.
國立成功大學	2022	First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering	Yu, X.-R.;Chang, W.-H.;Hong, T.-C.;Sung, P.-J.;Agarwal, Agarwal A.;Luo, G.-L.;Wu, C.-T.;Kao, Kao K.-H.;Su, C.-J.;Chang, S.-W.;Lu, W.-H.;Fu, P.-Y.;Lin, J.-H.;Wu, P.-H.;Cho, T.-C.;Ma, W.C.-Y.;Lu, D.-D.;Chao, T.-S.;Maeda, T.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H.
國立成功大學	2022	First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes	Yang, C.-Y.;Sung, P.-J.;Chuang, M.-H.;Chang, Chang C.-W.;Shih, Y.-J.;Huang, T.-Y.;Lu, D.D.;Hong, T.-C.;Yu, X.-R.;Lu, W.-H.;Chang, S.-W.;Tsai, J.-J.;Huang, M.-K.;Cho, T.-C.;Lee, Y.-J.;Luo, K.-L.;Wu, C.-T.;Su, C.-J.;Kao, Kao K.-H.;Chao, T.-S.;Wu, Wu W.-F.;Wang, Y.-H.
國立成功大學	2022	Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size	Yu, X.-R.;Chuang, M.-H.;Chang, S.-W.;Chang, W.-H.;Hong, T.-C.;Chiang, Chiang C.-H.;Lu, W.-H.;Yang, C.-Y.;Chen, W.-J.;Lin, J.-H.;Wu, P.-H.;Sun, T.-C.;Kola, S.;Yang, Yang Y.-S.;Da, Y.;Sung, P.-J.;Wu, C.-T.;Cho, T.-C.;Luo, G.-L.;Kao, Kao K.-H.;Chiang, M.-H.;Ma, W.C.-Y.;Su, C.-J.;Chao, T.-S.;Maeda, T.;Samukawa, Samukawa S.;Li, Y.;Lee, Y.-J.;Wu, Wu W.-F.;Tarng, J.-H.;Wang, Y.-H.
國立成功大學	2021	Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process	Tang, S.-W.;Huang, Z.-H.;Chen, Y.-C.;Wu, C.-H.;Lin, P.-H.;Chen, Z.-C.;Lu, M.-H.;Kao, Kao K.-H.;Wu, T.-L.
國立成功大學	2020	Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters	Sung, P.-J.;Chang, S.-W.;Kao, Kao K.-H.;Wu, C.-T.;Su, C.-J.;Cho, T.-C.;Hsueh, F.-K.;Lee, W.-H.;Lee, Y.-J.;Chao, T.-S.
國立成功大學	2020	Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates	Yang, T.-H.;Su, C.-J.;Wang, Y.-S.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, T.-L.
國立成功大學	2020	Process and Structure Considerations for the Post FinFET Era	Su, C.-J.;Sung, P.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.
國立成功大學	2020	3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers	Su, C.J.;Huang, M.K.;Lee, K.S.;Hu, V.P.H.;Huang, Y.F.;Zheng, B.C.;Yao, C.H.;Lin, N.C.;Kao, Kao K.H.;Hong, T.C.;Sung, P.J.;Wu, C.T.;Yu, T.Y.;Lin, K.L.;Tseng, Y.C.;Lin, C.L.;Lee, Y.J.;Chao, T.S.;Li, J.Y.;Wu, Wu W.F.;Shieh, J.M.;Wang, Y.H.;Yeh, W.K.
國立成功大學	2020	Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process	Chen, Y.-C.;Tang, S.-W.;Lin, P.-H.;Chen, Z.-C.;Lu, M.-H.;Kao, Kao K.-H.;Wu, T.-L.
國立成功大學	2019	Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs	Chen, S.-H.;Lian, S.-W.;Wu, T.R.;Chang, T.-R.;Liou, J.-M.;Lu, D.D.;Kao, Kao K.-H.;Chen, N.-Y.;Lee, W.-J.;Tsai, J.-H.
國立成功大學	2019	Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer	Wu, T.-L.;Tseng, Y.-Y.;Huang, C.-F.;Chen, Z.-S.;Lin, C.-C.;Chung, Chung C.-J.;Huang, P.-K.;Kao, Kao K.-H.
國立成功大學	2019	A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs	Tang, Y.-T.;Fan, C.-L.;Kao, Y.-C.;Modolo, N.;Su, C.-J.;Wu, T.-L.;Kao, Kao K.-H.;Wu, P.-J.;Hsaio, S.-W.;Useinov, A.;Su, P.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H.

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