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Showing items 1-33 of 33 (1 Page(s) Totally)
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| 國立成功大學 |
2023 |
Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation
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Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications
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Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory
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Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, P.-H.;Tseng, H.-C.;Liao, H.-T.;Chou, Y.-W.;Chiu, M.-Y.;Chen, Y.-Q. |
| 國立成功大學 |
2023 |
Exploring Performance and Reliability Behavior of Nanosheet Channel Thin-Film Transistors under Independent Dual Gate Bias Operation
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Ma, W.C.;Su, C.-J.;Kao, Kao K.-H.;Chen, Y.-Q.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel
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Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor
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Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
How Fault-Tolerant Quantum Computing Benefits from Cryo-CMOS Technology
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Chiang, H.-L.;Hadi, R.A.;Wang, J.-F.;Han, Han H.-C.;Wu, J.-J.;Hsieh, Hsieh H.-H.;Horng, J.-J.;Chou, W.-S.;Lien, B.-S.;Chang, Chang C.-H.;Chen, Y.-C.;Wang, Y.-H.;Chen, T.-C.;Liu, J.-C.;Liu, Y.-C.;Chiang, M.-H.;Kao, Kao K.-H.;Pulicherla, B.;Cai, J.;Chang, Chang C.-S.;Su, K.-W.;Cheng, K.-L.;Yeh, T.-J.;Peng, Y.-C.;Enz, C.;Chang, M.-C.F.;Chang, M.-F.;Wong, H.-S.P.;Radu, I.P. |
| 國立成功大學 |
2023 |
First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure
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Yu, X.-R.;Hsieh, C.-C.;Chuang, M.-H.;Chiu, M.-Y.;Sun, T.-C.;Geng, W.-Z.;Chang, W.-H.;Shih, Y.-J.;Lu, W.-H.;Chang, W.-C.;Lin, Y.-C.;Pai, Y.-C.;Lai, C.-Y.;Chuang, M.-H.;Dei, Y.;Yang, C.-Y.;Lu, H.-Y.;Lin, N.-C.;Wu, C.-T.;Kao, Kao K.-H.;Ma, W.C.-Y.;Lu, D.D.;Lee, Y.-J.;Luo, G.-L.;Chiang, M.-H.;Maeda, T.;Wu, Wu W.-F.;Li, Y.-M.;Hou, T.-H. |
| 國立成功大學 |
2023 |
Tunnel Thin-Film Transistor Featuring Ferroelectric Gate Stack for Synaptic Applications
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Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Cho, T.-C.;Guo, J.-Q.;Wu, C.-J.;Wu, P.-Y.;Hung, J.-Y. |
| 國立成功大學 |
2023 |
MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization
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Lin, W.-C.;Huang, Huang H.-P.;Kao, Kao K.-H.;Chiang, M.-H.;Lu, D.;Hsu, W.-C.;Wang, Y.-H.;Ma, W.C.-Y.;Tsai, H.-H.;Lee, Y.-J.;Chiang, H.-L.;Wang, J.-F.;Radu, I. |
| 國立成功大學 |
2022 |
First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO Gate Dielectric
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Ma, W.C.-Y.;Su, C.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, J.-H.;Wu, P.-H.;Chang, J.-C.;Yen, C.-L.;Tseng, H.-C.;Liao, H.-T.;Chou, Y.-W.;Chiu, M.-Y.;Chen, Y.-Q. |
| 國立成功大學 |
2022 |
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing
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Ma, W.C.-Y.;Su, C.-J.;Lee, Y.-J.;Kao, Kao K.-H.;Chang, T.-H.;Chang, J.-C.;Wu, P.-H.;Yen, C.-L.;Lin, J.-H. |
| 國立成功大學 |
2022 |
First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
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Chang, S.-W.;Lu, T.-H.;Yang, C.-Y.;Yeh, C.-J.;Huang, M.-K.;Meng, C.-F.;Chen, P.-J.;Chang, T.-H.;Chang, Y.-S.;Jhu, Jhu J.-W.;Hong, T.-C.;Ke, C.-C.;Yu, X.-R.;Lu, W.-H.;Baig, M.A.;Cho, T.-C.;Sung, P.-J.;Su, C.-J.;Hsueh, F.-K.;Chen, B.-Y.;Hu, Hu H.-H.;Wu, C.-T.;Lin, K.-L.;Ma, W.C.-Y.;Lu, D.D.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Huang, K.-P.;Chen, K.-M.;Li, Y.;Samukawa, Samukawa S.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Lee, W.-H.;Li, J.-Y.;Shieh, J.-M.;Tarng, J.-H.;Wang, Y.-H.;Yeh, W.-K. |
| 國立成功大學 |
2022 |
First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
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Yu, X.-R.;Chang, W.-H.;Hong, T.-C.;Sung, P.-J.;Agarwal, Agarwal A.;Luo, G.-L.;Wu, C.-T.;Kao, Kao K.-H.;Su, C.-J.;Chang, S.-W.;Lu, W.-H.;Fu, P.-Y.;Lin, J.-H.;Wu, P.-H.;Cho, T.-C.;Ma, W.C.-Y.;Lu, D.-D.;Chao, T.-S.;Maeda, T.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2022 |
First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes
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Yang, C.-Y.;Sung, P.-J.;Chuang, M.-H.;Chang, Chang C.-W.;Shih, Y.-J.;Huang, T.-Y.;Lu, D.D.;Hong, T.-C.;Yu, X.-R.;Lu, W.-H.;Chang, S.-W.;Tsai, J.-J.;Huang, M.-K.;Cho, T.-C.;Lee, Y.-J.;Luo, K.-L.;Wu, C.-T.;Su, C.-J.;Kao, Kao K.-H.;Chao, T.-S.;Wu, Wu W.-F.;Wang, Y.-H. |
| 國立成功大學 |
2022 |
Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size
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Yu, X.-R.;Chuang, M.-H.;Chang, S.-W.;Chang, W.-H.;Hong, T.-C.;Chiang, Chiang C.-H.;Lu, W.-H.;Yang, C.-Y.;Chen, W.-J.;Lin, J.-H.;Wu, P.-H.;Sun, T.-C.;Kola, S.;Yang, Yang Y.-S.;Da, Y.;Sung, P.-J.;Wu, C.-T.;Cho, T.-C.;Luo, G.-L.;Kao, Kao K.-H.;Chiang, M.-H.;Ma, W.C.-Y.;Su, C.-J.;Chao, T.-S.;Maeda, T.;Samukawa, Samukawa S.;Li, Y.;Lee, Y.-J.;Wu, Wu W.-F.;Tarng, J.-H.;Wang, Y.-H. |
| 國立成功大學 |
2021 |
Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process
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Tang, S.-W.;Huang, Z.-H.;Chen, Y.-C.;Wu, C.-H.;Lin, P.-H.;Chen, Z.-C.;Lu, M.-H.;Kao, Kao K.-H.;Wu, T.-L. |
| 國立成功大學 |
2020 |
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
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Sung, P.-J.;Chang, S.-W.;Kao, Kao K.-H.;Wu, C.-T.;Su, C.-J.;Cho, T.-C.;Hsueh, F.-K.;Lee, W.-H.;Lee, Y.-J.;Chao, T.-S. |
| 國立成功大學 |
2020 |
Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates
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Yang, T.-H.;Su, C.-J.;Wang, Y.-S.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, T.-L. |
| 國立成功大學 |
2020 |
Process and Structure Considerations for the Post FinFET Era
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Su, C.-J.;Sung, P.-J.;Kao, Kao K.-H.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K. |
| 國立成功大學 |
2020 |
3D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers
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Su, C.J.;Huang, M.K.;Lee, K.S.;Hu, V.P.H.;Huang, Y.F.;Zheng, B.C.;Yao, C.H.;Lin, N.C.;Kao, Kao K.H.;Hong, T.C.;Sung, P.J.;Wu, C.T.;Yu, T.Y.;Lin, K.L.;Tseng, Y.C.;Lin, C.L.;Lee, Y.J.;Chao, T.S.;Li, J.Y.;Wu, Wu W.F.;Shieh, J.M.;Wang, Y.H.;Yeh, W.K. |
| 國立成功大學 |
2020 |
Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process
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Chen, Y.-C.;Tang, S.-W.;Lin, P.-H.;Chen, Z.-C.;Lu, M.-H.;Kao, Kao K.-H.;Wu, T.-L. |
| 國立成功大學 |
2019 |
Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs
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Chen, S.-H.;Lian, S.-W.;Wu, T.R.;Chang, T.-R.;Liou, J.-M.;Lu, D.D.;Kao, Kao K.-H.;Chen, N.-Y.;Lee, W.-J.;Tsai, J.-H. |
| 國立成功大學 |
2019 |
Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer
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Wu, T.-L.;Tseng, Y.-Y.;Huang, C.-F.;Chen, Z.-S.;Lin, C.-C.;Chung, Chung C.-J.;Huang, P.-K.;Kao, Kao K.-H. |
| 國立成功大學 |
2019 |
A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs
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Tang, Y.-T.;Fan, C.-L.;Kao, Y.-C.;Modolo, N.;Su, C.-J.;Wu, T.-L.;Kao, Kao K.-H.;Wu, P.-J.;Hsaio, S.-W.;Useinov, A.;Su, P.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2019 |
First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
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Chang, S.-W.;Li, J.-H.;Huang, M.-K.;Huang, Y.-C.;Huang, S.-T.;Wang, H.-C.;Huang, Y.-J.;Wang, J.-Y.;Yu, L.-W.;Huang, Y.-F.;Hsueh, F.-K.;Sung, P.-J.;Wu, C.-T.;Ma, W.C.-Y.;Kao, Kao K.-H.;Lee, Y.-J.;Lin, C.-L.;Chuang, R.W.;Huang, K.-P.;Samukawa, Samukawa S.;Li, Y.;Lee, W.-H.;Chu, T.-Y.;Chao, T.-S.;Huang, G.-W.;Wu, Wu W.-F.;Li, J.-Y.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H.;Lu, D.D.;Wang, C.-J.;Lin, N.-C.;Su, C.-J.;Lo, S.-H.;Huang, Huang H.-F. |
| 國立成功大學 |
2019 |
Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications
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Sung, P.-J.;Chang, Chang C.-Y.;Chen, L.-Y.;Kao, Kao K.-H.;Su, C.-J.;Liao, T.-H.;Fang, C.-C.;Wang, C.-J.;Hong, T.-C.;Jao, C.-Y.;Hsu, Hsu H.-S.;Luo, S.-X.;Wang, Y.-S.;Huang, Huang H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Huang, Y.-M.;Hou, F.-J.;Luo, G.-L.;Huang, Y.-C.;Shen, Y.-L.;Ma, W.C.-Y.;Huang, K.-P.;Lin, K.-L.;Samukawa, Samukawa S.;Li, Y.;Huang, G.-W.;Lee, Y.-J.;Li, J.-Y.;Wu, Wu W.-F.;Shieh, J.-M.;Chao, T.-S.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2019 |
Fabrication of omega-gated negative capacitance finfets and SRAM
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Sung, P.-J.;Su, C.-J.;Lu, D.D.;Luo, S.-X.;Kao, Kao K.-H.;Ciou, J.-Y.;Jao, C.-Y.;Hsu, Hsu H.-S.;Wang, C.-J.;Hong, T.-C.;Liao, T.-H.;Fang, C.-C.;Wang, Y.-S.;Huang, Huang H.-F.;Li, J.-H.;Huang, Y.-C.;Hsueh, F.-K.;Wu, C.-T.;Ma, W.C.-Y.;Huang, K.-P.;Lee, Y.-J.;Chao, T.-S.;Li, J.-Y.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2018 |
Junctionless FETs with a Fin Body for Multi-VTH and Dynamic Threshold Operation
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Kumar, M.P.V.;Lin, J.-Y.;Kao, Kao K.-H.;Chao, T.-S. |
| 國立成功大學 |
2017 |
High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications
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Lee, Y.-J.;Hong, T.-C.;Hsueh, F.-K.;Sung, P.-J.;Chen, Chen C.-Y.;Chuang, S.-S.;Cho, T.-C.;Noda, S.;Tsou, Y.-C.;Kao, Kao K.-H.;Wu, C.-T.;Yu, T.-Y.;Jian, Y.-L.;Su, C.-J.;Huang, Y.-M.;Huang, W.-H.;Chen, B.-Y.;Chen, M.-C.;Huang, K.-P.;Li, J.-Y.;Chen, M.-J.;Li, Y.;Samukawa, Samukawa S.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Tseng, Tseng T.-Y.;Chao, T.-S.;Wang, Y.-H.;Yeh, W.-K. |
| 國立成功大學 |
2017 |
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
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Su, C.-J.;Tang, Y.-T.;Tsou, Y.-C.;Sung, P.-J.;Hou, F.-J.;Wang, C.-J.;Chung, S.-T.;Hsieh, C.-Y.;Yeh, Yeh Y.-S.;Hsueh, F.-K.;Kao, Kao K.-H.;Chuang, S.-S.;Wu, C.-T.;You, T.-Y.;Jian, Y.-L.;Chou, T.-H.;Shen, Y.-L.;Chen, B.-Y.;Luo, G.-L.;Hong, T.-C.;Huang, K.-P.;Chen, M.-C.;Lee, Y.-J.;Chao, T.-S.;Tseng, Tseng T.-Y.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
| 國立成功大學 |
2017 |
Undoped SiGe FETs with metal-insulator-semiconductor contacts
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Chen, L.-Y.;Hsieh, Y.-F.;Kao, Kao K.-H. |
| 國立成功大學 |
2017 |
Ultra-shallow junction formation by monolayer doping process in single crystalline Si and Ge for future CMOS devices
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Chuang, S.-S.;Cho, T.-C.;Sung, P.-J.;Kao, Kao K.-H.;Chen, H.J.H.;Lee, Y.-J.;Current, M.I.;Tseng, Tseng T.-Y. |
Showing items 1-33 of 33 (1 Page(s) Totally)
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