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國立成功大學 |
2020 |
Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering
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Wang, C.;Chang, Chang C.-H.;Herklotz, A.;Chen, Chen C.;Ganss, F.;Kentsch, U.;Chen, D.;Gao, X.;Zeng, Y.-J.;Hellwig, O.;Helm, M.;Gemming, S.;Chu, Y.-H.;Zhou, S. |
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