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Institution Date Title Author
國立成功大學 2022-04 Simulation-Based Study of Low Minimum Operating Voltage SRAM With Inserted-Oxide FinFETs and Gate-All-Around Transistors Wu;Yi-Ting;Ding;Fei;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae
國立成功大學 2021-11 Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers Wu;Yi-Ting;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae
國立成功大學 2019-04 Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology Wu;Yi-Ting;Ding;Fei;Connelly;Daniel;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae
國立成功大學 2017-10 Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology Wu;Yi-Ting;Ding;Fei;Connelly;Daniel;Zheng;Peng;Chiang;Meng-Hsueh;Chen;Jone, F.;Liu;King, Tsu-Jae

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