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Showing items 1-11 of 11 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:01:07Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si3N4 buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2019-04-02T06:00:42Z |
Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
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Lee, Ling; Fan, Wen-Chung; Ku, Jui-Tai; Chang, Wen-Hao; Chen, Wei-Kuo; Chou, Wu-Ching; Ko, Chih-Hsin; Wu, Cheng-Hsien; Lin, You-Ru; Wann, Clement H.; Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:47:44Z |
Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
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Lee, Ling; Fan, Wen-Chung; Ku, Jui-Tai; Chang, Wen-Hao; Chen, Wei-Kuo; Chou, Wu-Ching; Ko, Chih-Hsin; Wu, Cheng-Hsien; Lin, You-Ru; Wann, Clement H.; Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:11:14Z |
GaN growth on Si(111) using simultaneous AlN/alpha-Si(3)N(4) buffer structure
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Chang, Jet Rung; Yang, Tsung Hsi; Ku, Jui Tai; Shen, Shih Guo; Chen, Yi Cheng; Wong, Yuen Yee; Chang, Chun Yen |
| 國立交通大學 |
2014-12-08T15:09:52Z |
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei |
| 國立交通大學 |
2014-12-08T15:09:46Z |
Growth of free-standing GaN layer on Si(111) substrate
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Yang, Tsung Hsi; Ku, Jui Tai; Chang, Jet-Rung; Shen, Shih-Guo; Chen, Yi-Cheng; Wong, Yuen Yee; Chou, Wu Ching; Chen, Chien-Ying; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:07:51Z |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
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Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang |
| 國立交通大學 |
2014-12-08T15:07:41Z |
Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
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Ku, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao |
| 國立交通大學 |
2014-12-08T15:01:23Z |
Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer
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Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai |
| 國立成功大學 |
2009-03-01 |
The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei |
Showing items 1-11 of 11 (1 Page(s) Totally)
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