臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	造訪人次 : 31897911 線上人數 : 1465 教育部委託研究計畫計畫執行:國立臺灣大學圖書館

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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機構	日期	題名	作者
南台科技大學	2017-12-28	Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments	Kai-Huang Chen; Tsung-Ming Tsai; Chien-Min Cheng; Shou-Jen Huang; Kuan-Chang Chang; Shu-Ping Liang; Tai-Fa Young
南台科技大學	2017	Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices	Kai-Huang Chen; Chien-Min Cheng; Ming-Cheng Kao; Kuan-Chang Chang; Ting-Chang Chang; Tsung-Ming Tsai; Sean Wu; Feng-Yi Su
國立高雄師範大學	2013-11-21	High performance of graphene oxide-doped silicon oxide-based resistance random access memory	陳榮輝; Rong-Huei Chen;Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Kai-Huang Chen;Jen-Chung Lou;Tai-Fa Young;Chih-Cheng Shih;Ya-Liang Yang;Yin-Chih Pan;Tian-Jian Chu;Syuan-Yong Huang;Chih-Hung Pan;Yu-Ting Su;Yong-En Syu;Simon M Sze
國立高雄師範大學	2013-10	Characteristics of hafnium oxide resistance random access memory with different setting compliance current	陳榮輝; Rong-Huei Chen;Yu-Ting Su;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang;J. C. Lou;Tai-Fa Young;Kai-Huang Chen;Bae-Heng Tseng;Chih-Cheng Shih;Ya-Liang Yang;Min-Chen Chen;Tian-Jian Chu;Chih-Hung Pan;Yong-En Syu;Simon M. Sze
國立高雄師範大學	2013-08	Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process	陳榮輝; Rong-Huei Chen;Kuan-Chang Chang;Tsung-Ming Tsai;Rui Zhang;Ting-Chang Chang;Kai-Huang Chen;Jung-Hui Chen;Tai-Fa Young; J. C. Lou;Tian-Jian Chu;Chih-Cheng Shih;Jhih-Hong Pan;Yu-Ting Su;Yong-En Syu; Cheng-Wei Tung;Min-Chen Chen;Jia-Jie Wu;Ying Hu;Simon M. Sze
國立高雄師範大學	2013-07	Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device	陳榮輝; Rong-Huei Chen;Yong-En Syu;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Jen-Chung Lou;Tai-Fa Young;Min-Chen Chen;Ya-Liang Yang;Chih-Cheng Shih;Tian-Jian Chu;Jian-Yu Chen;Chih-Hung Pan;Yu-Ting Su;Hui-Chun Huang;Der-Shin Gan;Simon M. Sze
國立高雄師範大學	2013-05	The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory	陳榮輝; Rong-Huei Chen;Jen-Wei Huang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Jen-Chung Lou;Tai-Fa Young;Jung-Hui Chen;Hsin-Lu Chen;Yin-Chih Pan;Xuan Huang;Fengyan Zhang;Yong-En Syu;Simon M. Sze
國立高雄師範大學	2013-05	Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment	陳榮輝; Rong-Huei Chen;Kuan-Chang Chang;Chih-Hung Pan;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang;Jen-Chung Lou;Tai-Fa Young;Chih-Cheng Shih;Tian-Jian Chu;Jian-Yu Chen;Yu-Ting Su;Jhao-Ping Jiang;Kai-Huang Chen;Hui-Chun Huang;Yong-En Syu;Der-Shin Gan;Simon M. Sze
國立高雄師範大學	2013-05	Origin of Hopping Conduction in Graphene Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices	陳榮輝; Rong-Huei Chen;Kuan-Chang Chang;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Jen-Chung Lou;Tai-Fa Young;Min-Chen Chen;Ya-Liang Yang;Yin-Chih Pan;Geng-Wei Chang;Tian-Jian Chu;Chih-Cheng Shih;Jian-Yu Chen;Chih-Hung Pan;Yu-Ting Su;Yong-En Syu;Ya-Hsiang Tai;Simon M. Sze
國立高雄師範大學	2013-04	Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices	陳榮輝; Rong-Huei Chen;Kai-Huang Chen;Rui Zhang;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Jen-Chung Lou;Tai-Fa Young; Chih-Cheng Shih;Cheng-Wei Tung;Yong-En Syu;Simon M. Sze

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