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"kumar ankit"的相關文件
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| 國立交通大學 |
2020-05-15 |
Berezinskii-Kosterlitz-Thouless transition in an Al superconducting nanofilm grown on GaAs by molecular beam epitaxy
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Liang, Chi-Te; Chow, Lee; Lin, Sheng-Di; Patel, Dinesh K.; Yeh, Ching-Chen; Chang, Chau-Shing; Kumar, Ankit; Wu, Bi-Yi; Fan, Yen-Ting; Su, Guan-Ming |
| 國立交通大學 |
2020-02-02T23:54:27Z |
Topological Transition in a 3nm Thick Al Film Grown by Molecular Beam Epitaxy
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Kumar, Ankit; Su, Guan-Ming; Chang, Chau-Shing; Yeh, Ching-Chen; Wu, Bi-Yi; Patel, Dinesh K.; Fan, Yen-Ting; Lin, Sheng-Di; Chow, Lee; Liang, Chi-Te |
| 亞洲大學 |
201310 |
Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET
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Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep |
| 亞洲大學 |
201310 |
Design of a low on resistance high voltage (<100V) novel 3D NLDMOS with side STI and single P-top layer based on 0.18um BCD Process Technology
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Kumar, Ankit;Kumar, Ankit;Yulia, Emita;Hapsari, Emita Yulia;Kuma, Vasanth;Kumar, Vasanth;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Ningar, Vivek;Ningaraju, Vivek |
| 亞洲大學 |
2013-10 |
Effect of Trench Depth and Trench Angle in a High Voltage Polyflanked-Super junction MOSFET
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Kumar, Vijay;Srinat, Grama;Shreyas, Grama Srinath;Nidhi, Karuna;Nidhi, Karuna;Agarw, Neelam;Agarwal, Neelam;Kumar, Ankit;Kumar, Ankit;許健;Sheu, Gene;楊紹明;Yang, Shao-Ming;Mri, Aryadeep;Mrinal, Aryadeep |
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