English  |  正體中文  |  简体中文  |  總筆數 :2822924  
造訪人次 :  30007459    線上人數 :  1220
教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
關於TAIR

瀏覽

消息

著作權

相關連結

"kun wei lin"的相關文件

回到依作者瀏覽
依題名排序 依日期排序

顯示項目 1-17 / 17 (共1頁)
1 
每頁顯示[10|25|50]項目

機構 日期 題名 作者
國立高雄師範大學 2009 SiO2-passivation based hydrogen gas detector Jung-Hui Tsai;Chung-Fu Chang;Huey-Ing Chen;Kun-Wei Lin;Shiou-Ying Cheng;Jung-Hui Tsai;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 On an InP/InGaAs heterobipolar transistor with an InAlGaAs/InP step-graded heterostructure collector Jung-Hui Tsai;Tzu-Pin Chen;Chi-Jhung Lee;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2009 High performance heterostructure transistor with graded-doped sheets Jung-Hui Tsai;Li-Yang Chen;Chien-Chang Huang;Shiou-Ying Cheng;Kun-Wei Lin;Wen-Chau Liu; 蔡榮輝
建國科技大學 2004 應用白金/氧化層/磷化銦鎵蕭特基接觸製作寬廣溫度感測之氫氣感測器 林坤緯; Kun-Wei Lin
國立高雄師範大學 2002 High-Breakdown Voltage Heterostructure Fields-Effect Transistor for High Temperature Operations Jung-Hui Tsai;Jung-Hui Tsai;Wen-Lung Chang;Kuo-Hui Yu;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學 2001 On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations Jung-Hui Tsai;Wen-Chau Liu;Kuo-Hui Yu;Kun-Wei Lin;Cheng-Zu Wu;Kuan-Po Lin;Chih-Hung Y; 蔡榮輝
國立高雄師範大學 2001 Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures Jung-Hui Tsai;W. C. Wang;His-Jen Pan;Kuo-Hui Yu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 2001 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Jung-Hui Tsai;Kuo-Hui Yu;Kun-Wei Lin;Chin-Chuan Cheng;Wen-Lung Chan;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1997 InGaAs-GaAs pseudomorphic heterostructure Transistor Prepared by MOVPE Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Kun-Wei Lin,;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學 1996 Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure for multiple-valued logic applications Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學 1996 Pseudomorphic step-doped-channel field-effect transistor (SDCFET) Jung-Hui Tsai;Lih-Wen Laih;Cheng-Zu Wu;Kun-Wei Lin;Shiou-Ying Cheng;Wen-Chau Liu; 蔡榮輝
國立高雄師範大學 1996 Metal-insultor-semiconductor (MIS)-like field-effect-transistor for power system application Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng; 蔡榮輝
國立高雄師範大學 1996 High current drivability d-doping sheet InGaP/GaAs heterostructure bipolar transistor for power system applications Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Kun-Wei Lin;Chin-Chuan Cheng,; 蔡榮輝
國立高雄師範大學 1996 Investigation of InGaP/GaAs multiple-differential-resistance (NDR) device prepared by MOCVD Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Chin-Chuan Cheng;Kun-Wei Lin;H. R. Chen,; 蔡榮輝
國立高雄師範大學 1996 A new multiple negative-differential-resistance (MNDR) device with AlGaAs/step-graded InxGa1-xAs quantum well/GaAs structure Jung-Hui Tsai;Wen-Chau Liu;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學 1996 A new heterostructure-base bipolar transistor with multiple negative-differential-resistance Jung-Hui Tsai;Wen-Chau Liu;Wen-Shiung Lour;Lih-Wen Laih;Chin-Chuan Cheng;Kun-Wei Lin; 蔡榮輝
國立高雄師範大學 1996 On the InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with multiple S-shaped negative-differential-resistance Jung-Hui Tsai;Wen-Chau Liu;Kong-Beng Thei;Kun-Wei Lin;Chin-Chuan Cheng;H. R. Chen; 蔡榮輝

顯示項目 1-17 / 17 (共1頁)
1 
每頁顯示[10|25|50]項目