|
|
???tair.name??? >
???browser.page.title.author???
|
"kuo chien i"???jsp.browse.items-by-author.description???
Showing items 1-25 of 45 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:04:29Z |
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
|
Wang, Chin-Te; Kuo, Chien-, I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2019-04-02T06:00:31Z |
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
|
Sahoo, Kartika Chandra; Kuo, Chien-I; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:39Z |
V-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technology
|
Chiang, Che-Yang; Hsu, Heng-Tung; Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Shou; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:17Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
|
Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2017-04-21T06:48:56Z |
On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology
|
Hsu, Heng-Tung; Kuo, Chien-, I; Chang, Edward Yi |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
|
CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立交通大學 |
2015-07-21T08:29:18Z |
Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
|
Zeng, Yuping; Kuo, Chien-I; Hsu, Chingyi; Najmzadeh, Mohammad; Sachid, Angada; Kapadia, Rehan; Yeung, Chunwing; Chang, Edward; Hu, Chenming; Javey, Ali |
| 國立交通大學 |
2014-12-16T06:16:07Z |
Method for forming gate pattern for electronic device
|
Chen, Szu-Hung; Kuo, Chien-I; Chang, Edward Yi |
| 國立交通大學 |
2014-12-16T06:15:25Z |
OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
|
CHANG, Edward Yi; KUO, Chien-I; CHANG, Chun-Yen |
| 國立交通大學 |
2014-12-16T06:15:24Z |
High Electron Mobility Transistor and Method for Fabricating the Same
|
Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-16T06:14:14Z |
High electron mobility transistor and method for fabricating the same
|
Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-08T15:48:09Z |
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
|
Sahoo, Kartika Chandra; Kuo, Chien-I; Li, Yiming; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:47:54Z |
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
|
Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao |
| 國立交通大學 |
2014-12-08T15:38:24Z |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
|
Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin |
| 國立交通大學 |
2014-12-08T15:37:07Z |
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
|
Wang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2014-12-08T15:33:16Z |
The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications
|
Chang, Edward Yi; Chang, Chia Hua; Tang, Shih Hsuan; Hai Dang Trinh; Kuo, Chien I.; Hsu, Ching Yi; Su, Yung Hsuan |
| 國立交通大學 |
2014-12-08T15:31:04Z |
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
|
Trinh, Hai-Dang; Lin, Yueh-Chin; Kuo, Chien-I; Chang, Edward Yi; Hong-Quan Nguyen; Wong, Yuen-Yee; Yu, Chih-Chieh; Chen, Chi-Ming; Chang, Chia-Yuan; Wu, Jyun-Yi; Chiu, Han-Chin; Yu, Terrence; Chang, Hui-Cheng; Tsai, Joseph; Hwang, David |
| 國立交通大學 |
2014-12-08T15:30:25Z |
Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
|
Tang, Shih-Hsuan; Kuo, Chien-I; Trinh, Hai-Dang; Chang, Edward Yi; Nguyen, Hong-Quan; Nguyen, Chi-Lang; Luo, Guang-Li |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:29:32Z |
Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching
|
Yu, Chia-Hui; Hsu, Heng-Tung; Chiang, Che-Yang; Kuo, Chien-I; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:29:06Z |
Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band Applications
|
Lim, Wee Chin; Wang, Chin-Te; Kuo, Chien-I; Hsu, Li-Han; Tsai, Szu-Ping; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:33Z |
Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
|
Fatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:08Z |
The Circle-grid Electrode on Concentrated GaAs Solar Cells Efficiency
|
Chung, Chen-Chen; Yu, Hung-Wei; Hsu, Li-Han; Kuo, Chien-I; Nguyen-Hong Quan; Chiu, Yu-Sheng; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
|
Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:27:17Z |
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
|
Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Hsu, Li-Han; Lim, Wee-Chin; Miyamoto, Yasuyuki |
Showing items 1-25 of 45 (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page
|
