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| 國立成功大學 |
2016-02 |
GaN-Based Light-Emitting Diodes Prepared With Shifted Laser Stealth Dicing
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Chang, Shoou-Jinn Chang; Chang, L. M.; Chen, J. Y.; Hsu, C. S.; Kuo, D. S.; Shen, C. F.; Chen, Wei-Shou; Ko, T. K. |
| 國立成功大學 |
2014-01 |
GaN-Based LEDs With Rough Surface and Selective KOH Etching
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Chang, Shoou-Jinn; Chang, L. M.; Kuo, D. S.; Ko, T. K.; Hon, S. J.; Li, Shuguang |
| 國立成功大學 |
2012-02 |
GaN-Based LEDs with Sapphire Debris Removed by Phosphoric Etching
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Chang, Shoou-Jinn; Kuo, D. S.; Lam, K. T.; Wen, K. H.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2012-02 |
GaN-based LEDs with Ar plasma treatment
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Kuo, D. S.; Lam, K. T.; Wen, K. H.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 實踐大學 |
2012 |
Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer
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Li, S.;Kuo, D.S.;Liu, C.H.;Hung, S.C.;Chang, S.J. |
| 國立成功大學 |
2011-08 |
The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers
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Chiou, Y. Z.; Chiang, T. H.; Kuo, D. S.; Chang, S. J.; Ko, T. K.; Hon, S. J. |
| 國立成功大學 |
2009-04-15 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
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Kuo, D. S.; Chang, Shoou-Jinn; Ko, T. K.; Shen, C. F.; Hon, S. J.; Hung, S. C. |
| 實踐大學 |
2009 |
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
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Kuo, D.S.;Chang, S.J.;Ko, T.K.;Shen, C.F.;Hon, S.J.;Hung, S.C. |
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