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Showing items 541-565 of 738 (30 Page(s) Totally)
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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:18:33Z	Strong Exciton Polariton Dispersion in Multimode GaN Microcavity	Liu, M. C.; Cheng, Y. -J.; Hsu, S. -H.; Kuo, H. C.; Lu, T. C.; Wang, S. C.
國立交通大學	2014-12-08T15:18:05Z	Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K	Kuo, H. C.; Chen, S. W.; Kao, T. T.; Kao, C. C.; Chen, J. R.; Lu, T. C.; Wang, S. C.
國立交通大學	2014-12-08T15:17:42Z	Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates	Lee, Y. J.; Kuo, H. C.; Lu, T. C.; Su, B. J.; Wang, S. C.
國立交通大學	2014-12-08T15:17:04Z	Optically and electrically pumped GaN-based VCSELs	Lu, T. C.; Kao, C. C.; Huang, G. S.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:16:18Z	Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells	Lai, Fang-I; Kuo, S. Y.; Wang, J. S.; Kuo, H. C.; Wang, S. C.; Wang, H. S.; Liang, C. T.; Chen, Y. F.
國立交通大學	2014-12-08T15:16:18Z	Observation of strong red photoluminescence with broadband in indium oxynitride nanoparticles	Ko, T. S.; Chu, C. P.; Chen, H. G.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:16:18Z	Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands	Huang, H. W.; Chu, J. T.; Hsueh, T. H.; Ou-Yang, M. C.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:16:08Z	Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs	Yang, H. P. D.; Hsu, I. C.; Lai, F. I.; Lin, G.; Hsiao, R. S.; Maleev, N. A.; Blokhin, S. A.; Kuo, H. C.; Wang, S. C.; Chi, J. Y.
國立交通大學	2014-12-08T15:15:53Z	Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector	Lin, C. H.; Lai, C. F.; Ko, T. S.; Huang, H. W.; Kuo, H. C.; Hung, Y. Y.; Leung, K. M.; Yu, C. C.; Tsai, R. J.; Lee, C. K.; Lu, T. C.; Wang, S. C.
國立交通大學	2014-12-08T15:15:46Z	ZnO nanopowders fabricated by dc thermal plasma synthesis	Ko, T. S.; Yang, S.; Hsu, H. C.; Chu, C. P.; Lin, H. F.; Liao, S. C.; Lu, T. C.; Kuo, H. C.; Hsieh, W. F.; Wang, S. C.
國立交通大學	2014-12-08T15:15:38Z	Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation	Huang, Hung-Wen; Kao, C. C.; Chu, J. T.; Liang, W. D.; Kuo, H. C.; Wang, S. C.; Yu, C. C.
國立交通大學	2014-12-08T15:15:31Z	Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light	Shi, J. -W.; Huang, H. -Y; Wang, C. -K.; Sheu, J. -K.; Lai, W. -C.; Wu, Y-S.; Chen, C. -H.; Chu, J. -T.; Kuo, H. -C.; Lin, Wei-Ping; Yang, Tsung-Hsun; Chyi, J. -I.
國立交通大學	2014-12-08T15:15:19Z	Light extraction enhancement of InGaN-based green LEDs with a composite omnidirectional reflector	Lin, C. H.; Kuo, H. C.; Lai, C. F.; Huang, H. W.; Leung, K. M.; Yu, C. C.; Lo, J. R.
國立交通大學	2014-12-08T15:15:12Z	Tunable slow light device using quantum dot semiconductor laser	Peng, P. C.; Lin, C. T.; Kuo, H. C.; Tsai, W. K.; Liu, J. N.; Chi, S.; Wang, S. C.; Lin, G.; Yang, H. P.; Lin, K. F.; Chi, J. Y.
國立交通大學	2014-12-08T15:15:12Z	Effect of oxygen on characteristics of nickel oxide/indium tin oxide heterojunction diodes	Chang, Hung-Lu; Lu, T. C.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:15:07Z	Efficiency enhancement of GaN-based power-chip LEDs with sidewall roughness by natural lithography	Huang, Hung-Wen; Lai, C. F.; Wang, W. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; Tsai, R. J.; Yu, C. C.
國立交通大學	2014-12-08T15:15:06Z	Enhancement of InGaN/GaN flip-chip ITO LEDs with incline sidewalls coated with TiO2/SiO2 omnidirectional reflector	Chiu, C. H.; Kuo, H. C.; Lai, C. F.; Huang, H. W.; Wang, W. C.; Lu, T. C.; Wang, S. C.; Lin, C. H.
國立交通大學	2014-12-08T15:14:57Z	InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition	Ko, T. S.; Wang, T. C.; Gao, R. C.; Lee, Y. J.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; Chen, H. G.
國立交通大學	2014-12-08T15:14:54Z	Effect of growth conditions on the Al composition and quality of AlGaN film	Huang, G. S.; Yao, H. H.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:14:36Z	High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness	Huang, H. W.; Kuo, H. C.; Lai, C. F.; Lee, C. E.; Chiu, C. W.; Lu, T. C.; Wang, S. C.; Lin, C. H.; Leung, K. M.
國立交通大學	2014-12-08T15:14:29Z	Study on optimal growth conditions of a-plane GaN grown on r-plane sapphire by metal-organic chemical vapor deposition	Ko, T. S.; Wang, T. C.; Gao, R. C.; Chen, H. G.; Huang, G. S.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:14:28Z	Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency	Lee, Y. J.; Lu, T. C.; Kuo, H. C.; Wang, S. C.; Hsu, T. C.; Hsieh, M. H.; Jou, M. J.; Lee, B. J.
國立交通大學	2014-12-08T15:14:16Z	Optical properties of InGaN quantum dots grown by SiN(x) nanomasks	Huang, L. L.; Chang, H. J.; Chou, Y. Y.; Wang, C. H.; Chen, T. T.; Chen, Y. F.; Tsai, J. Y.; Wang, S. C.; Kuo, H. C.
國立交通大學	2014-12-08T15:14:14Z	Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes	Lee, Y. J.; Lin, P. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.
國立交通大學	2014-12-08T15:14:12Z	Optical characteristics of a-plane InGaN/GaN multiple quantum wells with different well widths	Ko, T. S.; Lu, T. C.; Wang, T. C.; Lo, M. H.; Chen, J. R.; Gao, R. C.; Kuo, H. C.; Wang, S. C.; Shen, J. L.

Showing items 541-565 of 738 (30 Page(s) Totally)
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