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Showing items 76-100 of 216 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:37Z |
Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB
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Chang, YH; Lin, GR; Kuo, HC; Chi, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:34Z |
Silicon defect and nanocrystal related white and red electroluminescence of Si-rich SiO2 based metal-oxide-semiconductor diode
|
Lin, CK; Lin, GR; Lin, CJ; Kuo, HC; Chen, CY |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
|
Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
|
Lin, CK; Kuo, HC; Liao, YS; Lin, GR |
| 國立交通大學 |
2014-12-08T15:25:14Z |
10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
|
Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M |
| 國立交通大學 |
2014-12-08T15:25:14Z |
Improved near-infrared luminescence of si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence
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Chen, CY; Lin, CJ; Kuo, HC; Lin, GR; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG |
| 國立交通大學 |
2014-12-08T15:25:13Z |
Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
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Chu, JT; Liang, WD; Kao, CC; Huang, HW; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:09Z |
Effects of N2O fluence on the PECVD-grown Si-rich SiOx with buried Si nanocrystals
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Lin, CJ; Kuo, HC; Chen, CY; Chueh, YL; Chou, LJ; Chang, CW; Diau, EWG; Lin, GR |
| 國立交通大學 |
2014-12-08T15:25:09Z |
CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2
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Lin, CJ; Chueh, YL; Chou, LJ; Kuo, HC; Lin, GR |
| 國立交通大學 |
2014-12-08T15:19:39Z |
High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
|
Kuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:30Z |
Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
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Yang, HPD; Lai, FI; Chang, YH; Yu, HC; Sung, CP; Kuo, HC; Wang, SC; Lin, SY; Chi, JY |
| 國立交通大學 |
2014-12-08T15:19:28Z |
Photoluminescence from In0.3Ga0.7N/GaN multiple-quantum-well nanorods
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Hsueh, TH; Huang, HW; Lai, FI; Sheu, JK; Chang, YH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:24Z |
Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks
|
Hsueh, TH; Huang, HW; Kao, CC; Chang, YH; Ou-Yang, MC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication of large-area GaN-based light-emitting diodes on Cu substrate
|
Chu, JT; Huang, HW; Kao, CC; Liang, WD; Lai, FI; Chu, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
10 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengths
|
Chang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:23Z |
Fabrication and micro-photoluminescence investigation of Mg-doped gallium nitride nanorods
|
Chang, YH; Hsueh, TH; Lai, FI; Chang, CW; Yu, CC; Huang, HW; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:14Z |
Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
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Huang, HW; Kao, CC; Chu, JI; Kuo, HC; Wang, SC; Yu, CC |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
|
Chang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
Enhancement in light output of InGaN-based microhole array light-emitting diodes
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Hsueh, TH; Shen, JK; Huang, HW; Chu, JY; Kao, CC; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:19:01Z |
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
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Chang, YH; Kuo, HC; Lai, FI; Tzeng, KF; Yu, HC; Sung, CP; Yang, HP; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:58Z |
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
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Lin, GR; Kuo, HC; Lin, CK; Feng, M |
| 國立交通大學 |
2014-12-08T15:18:41Z |
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
|
Lai, FI; Kuo, HC; Chang, YH; Tsai, MY; Chu, CP; Kuo, SY; Wang, SC; Tansu, N; Yeh, JY; Mawst, LJ |
| 國立交通大學 |
2014-12-08T15:18:38Z |
Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:18:37Z |
Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflector
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Kao, CC; Peng, YC; Yao, HH; Tsai, JY; Chang, YH; Chu, JT; Huang, HW; Kao, TT; Lu, TC; Kuo, HC; Wang, SC; Lin, CF |
| 國立交通大學 |
2014-12-08T15:18:32Z |
Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface
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Huang, HW; Chu, JT; Kao, CC; Hseuh, TH; Lu, TC; Kuo, HC; Wang, SC; Yu, CC |
Showing items 76-100 of 216 (9 Page(s) Totally)
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