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| 臺大學術典藏 |
2018-09-10T04:11:30Z |
Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
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Hong, Minghwei;Kuo, Jenn-Ming;Kwo, Jueinai Raynien;Mannaerts, Joseph Petrus;Wang, Yu-Chi; Hong, Minghwei; Kuo, Jenn-Ming; Kwo, Jueinai Raynien; Mannaerts, Joseph Petrus; Wang, Yu-Chi; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
Transistor
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Chen, Young-Kai;Cho, Alfred Yi;Hobson, William Scott;Hong, Minghwei;Kuo, Jenn-Ming;Kwo, Jueinai Raynien;Murphy, Donald Winslow;Ren, Fan; Chen, Young-Kai; Cho, Alfred Yi; Hobson, William Scott; Hong, Minghwei; Kuo, Jenn-Ming; Kwo, Jueinai Raynien; Murphy, Donald Winslow; Ren, Fan; MINGHWEI HONG |
| 國立臺灣大學 |
2001-12 |
(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications
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Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung; Kuo, Jenn-Ming |
| 臺大學術典藏 |
2001-12 |
(AlxGa1 x)0:5In0:5P/In0:15Ga0:85As (x = 0; 0:3; 1:0) Heterostructure Doped-Channel FETs for Microwave Power Applications
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Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung; Kuo, Jenn-Ming; Yang, Shih-Cheng; Chiu, Hsien-Chin; Chan, Yi-Jen; Lin, Hao-Hsiung; Kuo, Jenn-Ming |
Showing items 1-4 of 4 (1 Page(s) Totally)
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