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| 國立交通大學 |
2019-10-05T00:09:47Z |
DC and dynamic switching characteristics of field-plated vertical geometry beta-Ga2O3 rectifiers
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Yang, Jiancheng; Carey, Patrick; Ren, Fan; Chen, Yen-Ting; Liao, Y.; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Pearton, S. J.; Smith, David J.; Kuramata, Akito |
| 國立交通大學 |
2019-08-02T02:18:33Z |
Implementation of a 900 V Switching Circuit for High Breakdown Voltage beta-Ga2O3 Schottky Diodes
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Chen, Yen-Ting; Yang, Jiancheng; Ren, Fan; Chang, Chin-Wei; Lin, Jenshan; Pearton, S. J.; Tadjer, Marko J.; Kuramata, Akito; Liao, Yu-Te |
| 國立交通大學 |
2019-04-02T06:00:32Z |
Switching Behavior and Forward Bias Degradation of 700V, 0.2A, beta-Ga2O3 Vertical Geometry Rectifiers
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Yang, Jiancheng; Fares, Chaker; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko; Smith, David J.; Pearton, S. J.; Kuramata, Akito |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Dynamic Switching Characteristics of 1 A Forward Current beta-Ga2O3 Rectifiers
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Yang, Jiancheng; Ren, Fan; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Tadjer, Marko J.; Pearton, S. J.; Kuramata, Akito |
Showing items 1-4 of 4 (1 Page(s) Totally)
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