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Showing items 526-550 of 563 (23 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	2012	Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition	Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device	Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; Kwo, J.
國立臺灣大學	2012	InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics	Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M.
國立臺灣大學	2012	Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric	Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.
國立政治大學	2011-11	Intrinsic Spin-Dependent Thermal Transport	李尚凡; Huang,S. Y. ; Wang,W. G. ; S. F. Lee; Kwo,J. ; Chien,C. L.
國立成功大學	2011-05-04	The Growth of an Epitaxial ZnO Film on Si(111) with a Gd(2)O(3)(Ga(2)O(3)) Buffer Layer	Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
國立政治大學	2011-04	Magnetization reversal processes of epitaxial Fe3Si films on GaAs(001)	李尚凡; Liu, Y.C.;Chang, P.;Huang, S.Y.;Chang, L.J.;Lin, W.C. ; Lee, S.F. ; Hong, M. ; Kwo, J.
國立政治大學	2011	Demonstration of edge roughness effect on the magnetization reversal of spin valve submicron wires	李尚凡; Hung,H.Y. ;Huang,S.Y. ;Chang,P. ;Lin,W.C. ;Liu,Y.C. ;Lee,S.F. ;Hong,M. ;Kwo,J.
國立臺灣大學	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.
臺大學術典藏	2011	Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy	Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; YA-PING CHIU
臺大學術典藏	2010	Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Chang, Y.H.;Wu, Y.D.;Hong, M.;Kwo, J.; Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2009-01	Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)	Liu, W. R.; Li, Y. H.; Hsieh, W. F.; Hsu, C. H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J.
臺大學術典藏	2009	Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics	Lin, C.A.;Lin, T.D.;Chiang, T.H.;Chiu, H.C.;Chang, P.;Hong, M.;Kwo, J.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG
國立成功大學	2008-03	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si(111) using a gamma-Al2O3 buffer layer	Liu, W. R.; Li, Y. H.; Hsieh, Wen-Feng; Hsu, C. H.; Lee, W. C.; Hong, M.; Kwo, J.
臺大學術典藏	2008	Time dependent preferential sputtering in the HfO 2 layer on Si (100)	MINGHWEI HONG; Kwo, J; Hong, M; Hwang, J; Lee, WC; Chang, SJ
臺大學術典藏	2008	High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics	Lee, Y.J.;Lee, W.C.;Nieh, C.W.;Yang, Z.K.;Kortan, A.R.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Nieh, C.W.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
國立成功大學	2007-06-04	Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN	Chang, Y. C.; Chiu, H. C.; Lee, Y. J.; Huang, M. L.; Lee, K. Y.; Hong, M.; Chiu, Y. N.; Kwo, J.; Wang, Yeong-Her
國立成功大學	2007-04	MBE grown high kappa dielectrics Ga2O3(Gd2O3) on GaN	Chang, Yao-Chung; Lee, Y. J.; Chiu, Y. N.; Lin, Tsung-Da; Wu, S. Y.; Chiu, Han-Chin; Kwo, J.; Wang, Yeong-Her; Hong, Minghwei
臺大學術典藏	2006	Structural Investigation of Epitaxial HfO2 Films by X-ray Scattering	Hsu, CH; Yang, ZK; Chang, P; Hong, M; Kwo, J; Huang, Chih-Mao; Lee, Hsin-Yi; MINGHWEI HONG
臺大學術典藏	2006	Energy-band parameters of atomic-layer-deposition Al2O 3/InGaAs heterostructure	MINGHWEI HONG; Hong, M.; Wu, T.B.; Kwo, J.; Lin, T.D.; Chang, C.H.; Chang, Y.C.; Huang, M.L.
國立成功大學	2003-07-01	Schottky barrier height and interfacial state density on oxide-GaAs interface	Hwang, Jenn-Shyong; Chang, C. C.; Chen, M. F.; Chen, C. C.; Lin, K. I.; Tang, F. C.; Hong, M.; Kwo, J.
臺大學術典藏	2002	Single-crystal GaN/Gd2O3/GaN heterostructure	Hong, M.;Kwo, J.;Chu, S.N.G.;Mannaerts, J.P.;Kortan, A.R.;Ng, H.M.;Cho, A.Y.;Anselm, K.A.;Lee, C.M.;Chyi, J.I.; Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG
臺大學術典藏	2001	Structural studies of rare earth oxide Gd_2O3 film on GaAs (100) using secondary electron imaging	MINGHWEI HONG; Mannaerts, JP; Kwo, J; Kortan, AR; Hong, M; Erbudak, M;Steiner, C;Bolliger, B;Flukiger, T;Hensch, A;Hong, M;Kortan, AR;Kwo, J;Mannaerts, JP; Erbudak, M; Steiner, C; Bolliger, B; Flukiger, T; Hensch, A
臺大學術典藏	2001	HCP single crystal rare earth oxides on GaN	Lee, CM; Chyi, JI; MINGHWEI HONG; Kortan, AR; Kwo, J; Mannaerts, JP; Hong, M; Hong, M;Kortan, AR;Kwo, J;Mannaerts, JP;Lee, CM;Chyi, JI
臺大學術典藏	2001	Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces	Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Lay, TS; Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, Wei-Hsiu;Huang, DJ

Showing items 526-550 of 563 (23 Page(s) Totally)
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