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"kwo j"的相關文件
顯示項目 106-115 / 563 (共57頁)
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| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2 O3 epitaxial films on Si (111)
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Lee, Y.J.;Lee, W.C.;Huang, M.L.;Wu, S.Y.;Nieh, C.W.;Hong, M.;Kwo, J.;Hsu, C.-H.; Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Engineering of threshold voltages in molecular beam epitaxy-grown Al 2 O3 / Ga2 O3 (Gd2 O 3) / In0.2 Ga0.8 As
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Wu, Y.D.;Lin, T.D.;Chiang, T.H.;Chang, Y.C.;Chiu, H.C.;Lee, Y.J.;Hong, M.;Lin, C.A.;Kwo, J.; Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:34Z |
Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
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Lin, T.D.;Wu, Y.D.;Chang, Y.C.;Chiang, T.H.;Chuang, C.Y.;Lin, C.A.;Chang, W.H.;Chiu, H.C.;Tsai, W.;Kwo, J.;Hong, M.; Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers
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Chu, L.K.;Chu, R.L.;Lin, T.D.;Lee, W.C.;Lin, C.A.;Huang, M.L.;Lee, Y.J.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Al2O3/Ga2O3(Gd 2O3) passivation on In0.20Ga 0.80As/GaAs - Structural intactness with high-temperature annealing
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Lee, Y.J.;Lee, C.H.;Tung, L.T.;Chiang, T.H.;Lai, T.Y.;Kwo, J.;Hsu, C.-H.;Hong, M.; Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:33Z |
Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2
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Chang, P.;Lee, W.C.;Huang, M.L.;Lee, Y.J.;Hong, M.;Kwo, J.; Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT
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Chu, L.K.;Chu, R.L.;Lin, C.A.;Lin, T.D.;Chiang, T.H.;Kwo, J.;Hong, M.; Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Brammertz, G.;Wang, W.-E.;Hong, M.;Kwo, J.;Dekoster, Caymax, M.;Meuris, M.;Heyns, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:32Z |
Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing
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Chang, Y.C.;Merckling, C.;Penaud, J.;Lu, C.Y.;Wang, W.-E.;Dekoster, J.;Meuris, M.;Caymax, M.;Heyns, M.;Kwo, J.;Hong, M.; Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:31Z |
Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2 O3/Ga2O3(Gd2O 3) as the gate dielectric
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Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG; Chang, W.H.;Chiang, T.H.;Wu, Y.D.;Hong, M.;Lin, C.A.;Kwo, J. |
顯示項目 106-115 / 563 (共57頁)
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