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"kwo j"的相關文件
顯示項目 186-210 / 563 (共23頁)
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| 國立交通大學 |
2019-04-02T06:00:59Z |
Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)
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Liu, W. -R.; Li, Y. -H.; Hsieh, W. F.; Hsu, C. -H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2019-04-02T05:59:51Z |
H2S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:59:42Z |
Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)
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Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2019-04-02T05:59:00Z |
Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
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Lee, Y. J.; Lee, C. H.; Tung, L. T.; Chiang, T. H.; Lai, T. Y.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 國立交通大學 |
2019-04-02T05:58:53Z |
The Growth of an Epitaxial ZnO Film on Si(111) with a Gd2O3(Ga2O3) Buffer Layer
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Lin, B. H.; Liu, W. R.; Yang, S.; Kuo, C. C.; Hsu, C. -H.; Hsieh, W. F.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. |
| 國立交通大學 |
2019-04-02T05:58:53Z |
Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
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Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M. |
| 臺大學術典藏 |
2019-03-11T08:01:10Z |
High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
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Hong, M.;Kwo, J.;Pi, T.W.;Lin, T.D.;Chang, W.H.;Liao, M.H.; Chang, W.H.; Lin, T.D.; Liao, M.H.; Pi, T.W.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
Detection of topological surface states by spin pumping at room temperature
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Fanchiang, YT;Cheng, CK;Hong, M;Lin, HY;Chen, KH;Yang, SR;Wu, CN;Kwo, J;Lee, SF; Fanchiang, YT; Cheng, CK; Hong, M; Lin, HY; Chen, KH; Yang, SR; Wu, CN; Kwo, J; Lee, SF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:32:24Z |
High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer
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Chen, KH;Lin, HY;Wang, CY;Yang, SR;Kwo, J;Cheng, CK;Hong, M;Zhang, XQ;Lee, YH; Chen, KH; Lin, HY; Wang, CY; Yang, SR; Kwo, J; Cheng, CK; Hong, M; Zhang, XQ; Lee, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Wu, CN;Lin, YH;Fanchiang, YT;Hung, HY;Lin, HY;Lin, PH;Lin, JG;Lee, SF;Hong, M;Kwo, J; Wu, CN; Lin, YH; Fanchiang, YT; Hung, HY; Lin, HY; Lin, PH; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In) GaAs surfaces: electronic and electric structures
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Pi, TW;Lin, YH;Fanchiang, YT;Chiang, TH;Wei, CH;Lin, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, YH; Fanchiang, YT; Chiang, TH; Wei, CH; Lin, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization
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Wu, SY;Chen, KH;Lin, YH;Cheng, CK;Hsu, CH;Kwo, J;Hong, M; Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Investigation of the transport properties of Bi2 Se3 films grown on various substrates
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Lin, HY;Wang, CY;Chen, KHM;Lin, YH;Chen, KH;Yang, BY;Hong, M;Kwo, J; Lin, HY; Wang, CY; Chen, KHM; Lin, YH; Chen, KH; Yang, BY; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:41Z |
Demonstration of large field effect in topological insulator films via a high-kappa back gate
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Wang, CY;Lin, HY;Lin, YH;Chen, KH;Yang, BY;Chen, KHM;Peng, ZJ;Lee, SF;Hong, M;Kwo, J; Wang, CY; Lin, HY; Lin, YH; Chen, KH; Yang, BY; Chen, KHM; Peng, ZJ; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface
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Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG; Liu, YC;Chen, YW;Tseng, SC;Chang, MT;Lo, SC;Lin, YH;Cheng, CK;Hung, HY;Hsu, CH;Kwo, J;others |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
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Lin, YH;Cheng, CK;Chen, KH;Fu, CH;Chang, TW;Hsu, CH;Kwo, J;Hong, M; Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer deposition
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Pi, TW;Lin, TD;Lin, HY;Chang, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, TD; Lin, HY; Chang, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures
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Kwo, J; MINGHWEI HONG; Hung, HY;Chiang, TH;Syu, BZ;Fanchiang, YT;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)
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Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs
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Pi, TW;Lin, TD;Chang, WH;Chang, YC;Hong, M;Kwo, J; Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission study
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Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
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MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
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Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG |
顯示項目 186-210 / 563 (共23頁)
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