|
|
???tair.name??? >
???browser.page.title.author???
|
"kwo j"???jsp.browse.items-by-author.description???
Showing items 201-225 of 563 (23 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Epitaxial ferromagnetic Fe3Si on GaAs (111) A with atomically smooth surface and interface
|
Liu, YC; Chen, YW; Tseng, SC; Chang, MT; Lo, SC; Lin, YH; Cheng, CK; Hung, HY; Hsu, CH; Kwo, J; others; MINGHWEI HONG; Liu, YC;Chen, YW;Tseng, SC;Chang, MT;Lo, SC;Lin, YH;Cheng, CK;Hung, HY;Hsu, CH;Kwo, J;others |
| 臺大學術典藏 |
2018-09-10T15:21:40Z |
Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition
|
Lin, YH;Cheng, CK;Chen, KH;Fu, CH;Chang, TW;Hsu, CH;Kwo, J;Hong, M; Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0. 53Ga0. 47As (001)-4$\\times$ 2 from atomic layer deposition
|
Pi, TW;Lin, TD;Lin, HY;Chang, YC;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, TD; Lin, HY; Chang, YC; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures
|
Kwo, J; MINGHWEI HONG; Hung, HY;Chiang, TH;Syu, BZ;Fanchiang, YT;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Chiang, TH; Syu, BZ; Fanchiang, YT; Lin, JG; Lee, SF; Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
|
MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)
|
Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs
|
Pi, TW;Lin, TD;Chang, WH;Chang, YC;Hong, M;Kwo, J; Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Interfacial electronic structure of trimethyl-aluminum and water on an In0. 20Ga0. 80As (001)-4$\\times$ 2 surface: A high-resolution core-level photoemission study
|
Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY; Chiang, TH; Liu, YT; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
|
MINGHWEI HONG; Hong, M; Kwo, J; Chen, Min-Cheng; Lee, MY; Hong, PF; Chang, YC; Chang, YH; Lin, TD;Chang, WH;Chu, RL;Chang, YC;Chang, YH;Lee, MY;Hong, PF;Chen, Min-Cheng;Kwo, J;Hong, M; Lin, TD; Chang, WH; Chu, RL |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces
|
Chang, YC;Chang, WH;Merckling, C;Kwo, J;Hong, M; Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:44Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111)
|
Kuo, CC;Liu, W-R;Lin, BH;Hsieh, WF;Hsu, C-H;Lee, WC;Hong, M;Kwo, J; Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
|
Chiang, TH; Liu, YT; Chang, YC; Lin, TD; Wertheim, GK; Kwo, J; Hong, M; MINGHWEI HONG; Pi, TW;Lin, HY;Chiang, TH;Liu, YT;Chang, YC;Lin, TD;Wertheim, GK;Kwo, J;Hong, M; Pi, TW; Lin, HY |
| 臺大學術典藏 |
2018-09-10T09:46:43Z |
Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt
|
Hung, HY;Luo, GY;Chiu, YC;Chang, P;Lee, WC;Lin, JG;Lee, SF;Hong, M;Kwo, J; Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:44:27Z |
Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals
|
Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy
|
Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
TL-BASED SUPERCONDUCTING FILMS BY SPUTTERING USING ASINGLE TARGET
|
Kwo, J; Bacon, DD; MINGHWEI HONG; Hong, M;Kortan, AR;Kwo, J;Bacon, DD; Hong, M; Kortan, AR |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As
|
Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY
|
Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)
|
Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; Hong, M; Kwo, J; Hsu, C-H; Hsieh, WF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer
|
Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films
|
Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors
|
Huang, ML;Chang, YH;Lin, TD;Lin, HY;Liu, YT;Pi, TW;Hong, M;Kwo, J; Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
|
Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
|
Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
|
Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
Showing items 201-225 of 563 (23 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page
|
