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"kwo j"的相關文件
顯示項目 231-240 / 563 (共57頁)
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| 臺大學術典藏 |
2018-09-10T09:18:13Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y 2O 3 dilute magnetic oxide films
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Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG |
| 臺大學術典藏 |
2018-09-10T08:43:14Z |
Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy
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Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; YA-PING CHIU |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, LK;Merckling, C;Alian, A;Dekoster, J;Kwo, J;Hong, M;Caymax, M;Heyns, Marc; Chu, LK; Merckling, C; Alian, A; Dekoster, J; Kwo, J; Hong, M; Caymax, M; Heyns, Marc; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:14Z |
Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics
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Chang, YC;Huang, ML;Chang, YH;Lee, YJ;Chiu, HC;Kwo, J;Hong, M; Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer
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Lin, BH;Liu, WR;Yang, S;Kuo, CC;Hsu, C-H;Hsieh, WF;Lee, WC;Lee, YJ;Hong, M;Kwo, J; Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN
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Chang, WH;Chang, P;Lee, WC;Lai, TY;Kwo, J;Hsu, C-H;Hong, JM;Hong, M; Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs
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Chang, YH;Huang, ML;Chang, P;Lin, CA;Chu, YJ;Chen, BR;Hsu, CL;Kwo, J;Pi, TW;Hong, M; Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
MBE—Enabling technology beyond Si CMOS
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Chang, P;Lee, WC;Lin, TD;Hsu, CH;Kwo, J;Hong, M; Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation
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Pi, T-W;Huang, ML;Kwo, J;Lee, WC;Chu, LK;Lin, TD;Chiang, TH;Wang, YC;Wu, YD;Hong, M; Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:12Z |
InGaAs and Ge MOSFETs with high $κ$ dielectrics
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Lee, WC;Chang, P;Lin, TD;Chu, LK;Chiu, HC;Kwo, J;Hong, M; Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG |
顯示項目 231-240 / 563 (共57頁)
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