|
"kwo j"的相關文件
顯示項目 281-290 / 563 (共57頁)
<< < 24 25 26 27 28 29 30 31 32 33 > >>
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties
|
Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
|
Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Structure of epitaxial Gd 2 O 3 films grown on GaAs (100)
|
Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Kopylov, N; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Electrical response of superconducting YBa2Cu3O7- $δ$ to light
|
Brocklesby, Wo S;Monroe, Don;Levi, AFJ;Hong, M;Liou, Sy\\_Hwang;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, Wo S; Monroe, Don; Levi, AFJ; Hong, M; Liou, Sy\\_Hwang; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Research advances on III-V MOSFET electronics beyond Si CMOS
|
Kwo, J;Hong, M; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
|
Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga 2 O 3 (Gd 2 O 3)/GaAs power MOSFETs
|
Wang, YC; Hong, M; Kuo, JM; Mannaerts, JP; Tsai, HS; Kwo, J; Krajewski, JJ; Chen, YK; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Passivation of GaAs using gallium-gadolinium oxides
|
Masaitis, RL; Sergent, AM; MINGHWEI HONG; Opila, RL; Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
|
Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:17Z |
GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy
|
Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG |
顯示項目 281-290 / 563 (共57頁)
<< < 24 25 26 27 28 29 30 31 32 33 > >>
每頁顯示[10|25|50]項目
|
