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Showing items 321-330 of 563 (57 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:10Z |
Electrical response of superconducting YBa 2 Cu 3 O/sub 7-//sub $δ$/to light
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Brocklesby, WS;Monroe, D;Levi, AFJ;Hong, M;Liou, SH;Kwo, J;Rice, CE;Mankiewich, PM;Howard, RE; Brocklesby, WS; Monroe, D; Levi, AFJ; Hong, M; Liou, SH; Kwo, J; Rice, CE; Mankiewich, PM; Howard, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:10Z |
Materials and tunneling characteristics of HTSC Y sub (1) Ba sub (2) Cu sub (3) O sub (7-x) thin films by molecular beam epitaxy.
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Kwo, J;Hong, M;Fulton, T; Kwo, J; Hong, M; Fulton, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:09Z |
Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides
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Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics
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Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Insitu epitaxial growth of Y1Ba2Cu3O7- x films by molecular beam epitaxy with an activated oxygen source
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Kwo, J;Hong, M;Trevor, DJ;Fleming, RM;White, AE;Farrow, RC;Kortan, AR;Short, KT; Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Ga 2 O 3 (Gd 2 O 3)/InGaAs enhancement-mode n-channel MOSFETs
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Ren, F; Kuo, JM; Hong, M; Hobson, WS; Lothian, JR; Lin, J; Tsai, HS; Mannaerts, JP; Kwo, J; Chu, SNG; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:25Z |
Crystal structure of the 80 K superconductor YBa2Cu4O8
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Marsh, P;Fleming, RM;M;ich, ML;DeSantolo, AM;Kwo, J; Marsh, P; Fleming, RM; M; ich, ML; DeSantolo, AM; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As
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Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Interlayer exchange in magnetic superlattices
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Yafet, Y;Kwo, J;Hong, M;Majkrzak, CF;O??Brien, T; Yafet, Y; Kwo, J; Hong, M; Majkrzak, CF; O¡¦Brien, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric
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Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG |
Showing items 321-330 of 563 (57 Page(s) Totally)
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