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Showing items 346-355 of 563  (57 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:01:21Z Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:21Z Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance Hwang, JS;Wang, YC;Chou, WY;Tyan, SL;Hong, M;Mannaerts, JP;Kwo, J;others; Hwang, JS; Wang, YC; Chou, WY; Tyan, SL; Hong, M; Mannaerts, JP; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Magnetic superlattices Kwo, J;Hong, M;McWhan, DB;Yafet, Y;Fleming, RM;DiSalvo, FJ;Waszczak, JV;Majkrzak, CF;Gibbs, D;Goldmann, AI;others; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Fleming, RM; DiSalvo, FJ; Waszczak, JV; Majkrzak, CF; Gibbs, D; Goldmann, AI; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z High critical current superconducting Bi-Sr-Ca-Cu-O films by sputtering Hong, M;Kwo, J;Yeh, J-J; Hong, M; Kwo, J; Yeh, J-J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:19Z Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:19Z Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG

Showing items 346-355 of 563  (57 Page(s) Totally)
<< < 30 31 32 33 34 35 36 37 38 39 > >>
View [10|25|50] records per page