|
"kwo j"的相關文件
顯示項目 461-510 / 563 (共12頁)
<< < 3 4 5 6 7 8 9 10 11 12 > >>
每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric
|
Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)
|
Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
GaAs-based MOSFETs with Al/sub 2/O/sub 3/gate dielectrics grown by atomic layer deposition
|
Ye, PD;Wilk, GD;Yang, B;Kwo, J;Gossmann, H-JL;Frei, M;Chu, SNG;Nakahara, S;Mannaerts, JP;Sergent, M;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, H-JL; Frei, M; Chu, SNG; Nakahara, S; Mannaerts, JP; Sergent, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS
|
Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
|
MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:34Z |
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer
|
Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, KK;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Advances in high & kappa gate dielectrics for Si and III-V semiconductors
|
Kwo, J;Hong, M;Busch, B;Muller, DA;Chabal, YJ;Kortan, AR;Mannaerts, JP;Yang, B;Ye, P;Gossmann, H;others; Kwo, J; Hong, M; Busch, B; Muller, DA; Chabal, YJ; Kortan, AR; Mannaerts, JP; Yang, B; Ye, P; Gossmann, H; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
|
Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
|
Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
|
Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
Magnetic Properties of Epitaxial Single Crystal Ultrathin Fe sub 3 Si Films on GaAs(001)
|
Liou, SH; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
MBE growth and properties of Fe 3 (Al, Si) on GaAs (100)
|
Hong, M; Chen, HS; Kwo, J; Kortan, AR; Mannaerts, JP; Weir, BE; Feldman, LC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Interface reactions of high-k Y2O3 gate oxides with Si
|
Busch, BW;Kwo, J;Hong, M;Mannaerts, JP;Sapjeta, BJ;Schulte, WH;Garfunkel, E;Gustafsson, T; Busch, BW; Kwo, J; Hong, M; Mannaerts, JP; Sapjeta, BJ; Schulte, WH; Garfunkel, E; Gustafsson, T; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Insitu growth and properties of single-crystalline-like La2- xSrxCuO4 epitaxial films by off-axis sputtering
|
Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Magnetic rare earth superlattices
|
MINGHWEI HONG; Majkrzak, CF; Kwo, J; Hong, M; Yafet, Y; Gibbs, Doon; Chien, CL; Bohr, Jakob |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
|
MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
New phase formation of Gd2O3 films on GaAs (100)
|
Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density
|
Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces
|
Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si
|
Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal Opila Jr, YJ;Muller, DA;Chu, SNG;Sapjeta, BJ;Mannaerts, JP;Boone, T;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy
|
Lay, TS;Huang, KH;Hung, Wei-Hsiu;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
In situ growth and properties of single-crystalline-like La 2-x Sr x CuO 4 epitaxial films by off-axis sputtering (US)
|
Kao, HL; Kwo, J; Fleming, RM; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
Structure of Gd_2O3 films on GaAs (100)
|
Kortan, AR;Hong, M;Kwo, J;Mannaerts, JP;Krajewski, JJ;Kopylov, N;Steiner, C;Bolliger, B;Erbudak, M;others; Kortan, AR; Hong, M; Kwo, J; Mannaerts, JP; Krajewski, JJ; Kopylov, N; Steiner, C; Bolliger, B; Erbudak, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
|
Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:43Z |
A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors
|
Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density
|
Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
Initial growth of Gã 2Õ 3 (Gd̃ 2Õ 3) on GaAs: Key to the attainment of a low interfacial density of states
|
Hong, M; Lu, ZH; Kwo, J; Kortan, AR; Mannaerts, JP; Krajewski, JJ; Hsieh, KC; Chou, LJ; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:36Z |
High E gate dielectrics Gd2O3 and Y2O3 for silicon
|
Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
First demonstration of GaAs CMOS
|
Hong, M; Baillargeon, JN; Kwo, J; Mannaerts, JP; Cho, AY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
|
Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Observations of quasi-particle tunneling and Josephson behavior in Y1Ba2Cu3O7- x/native barrier/Pb thin-film junctions
|
Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
|
Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Magnetic properties of Gd/Dy superlattices: Experiment and theory
|
Camley, RE;Kwo, J;Hong, M;Chien, CL; Camley, RE; Kwo, J; Hong, M; Chien, CL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
|
Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structural modifications of the Gd 2 O 3 (110) films on GaAs (100)
|
Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:34Z |
Structure of epitaxial Gd2O3 films and their registry on GaAs (100) substrates
|
Bolliger, B; Erbudak, M; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
|
Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
|
Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions
|
Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
Single crystal rare earth oxides epitaxially grown on GaN
|
Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
Observations of quasi-particle tunneling and Josephson behavior in Y sub 1 Ba sub 2 Cu sub 3 O sub 7 minus x/native barrier/Pb thin-film junctions
|
Kwo, J;Fulton, TA;Hong, M;Gammel, PL; Kwo, J; Fulton, TA; Hong, M; Gammel, PL; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Structural modifications of the Gd2O3 (110) films on GaAs (100)
|
Steiner, C; Bolliger, B; Erbudak, M; Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si
|
Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Extended x-ray absorption fine-structure measurement of bond-length strain in epitaxial Gd2O3 on GaAs (001)
|
Nelson, EJ; Woicik, JC; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:31Z |
in-V MOSFET Using Ga203/Gd203 As The Gate Oxide
|
Ren, F; Hong, M; Wang, YC; Kwo, J; Mannaerts, JP; Abernathy, CR; Pearton, SJ; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:30Z |
Materials and Tunneling Characteristics of HTSC Y1Ba2Cu3O7-x Thin Films by Molecular Beam Epitaxy
|
Kwo, J;Hong, Minghwei;Fulton, TA;Gammel, PL;Mannaerts, JP; Kwo, J; Hong, Minghwei; Fulton, TA; Gammel, PL; Mannaerts, JP; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:48:27Z |
H(2)S molecular beam passivation of Ge(001)
|
Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:47:43Z |
Structural Characteristics of Nanometer Thick Gd(2)O(3) Films Grown on GaN (0001)
|
Chang, W. H.; Chang, P.; Lai, T. Y.; Lee, Y. J.; Kwo, J.; Hsu, C-H; Hong, M. |
| 國立交通大學 |
2014-12-08T15:46:42Z |
MBE-Enabling technology beyond Si CMOS
|
Chang, P.; Lee, W. C.; Lin, T. D.; Hsu, C. H.; Kwo, J.; Hong, M. |
| 國立交通大學 |
2014-12-08T15:46:02Z |
Epitaxial stabilization of a monoclinic phase in Y(2)O(3) films on c-plane GaN
|
Chang, W. H.; Chang, P.; Lee, W. C.; Lai, T. Y.; Kwo, J.; Hsu, C. -H.; Hong, J. M.; Hong, M. |
顯示項目 461-510 / 563 (共12頁)
<< < 3 4 5 6 7 8 9 10 11 12 > >>
每頁顯示[10|25|50]項目
|
