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Showing items 1-25 of 30  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:41:21Z A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB
國立交通大學 2014-12-08T15:40:57Z High-density MIM canpacitors using AlTaOx dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:57Z Fully silicided NiSi gate on La2O3 MOSFETs Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:49Z PVD HfO2 for high-precision MIM capacitor applications Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:40Z Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:20Z High-performance microwave coplanar bandpass and bandstop filters on Si substrates Chan, KT; Chin, A; Li, MF; Kwong, DL; McAlister, SP; Duh, DS; Lin, WJ; Chang, CY
國立交通大學 2014-12-08T15:40:17Z Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:40:09Z Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process Chan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ
國立交通大學 2014-12-08T15:40:03Z High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:40:03Z Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:39:51Z Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes Lin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:39:32Z Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:39:16Z Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:39:11Z Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N
國立交通大學 2014-12-08T15:39:00Z RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:38:45Z N-type Schottky barrier source/drain MOSFET using ytterbium silicide Zhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:38:36Z A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL
國立交通大學 2014-12-08T15:38:31Z Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors Low, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:38:27Z Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:38:26Z Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL
國立交通大學 2014-12-08T15:37:19Z Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:34:48Z Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate Zhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL
國立交通大學 2014-12-08T15:26:18Z Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:26:18Z RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:26:09Z High density RF MIM capacitors using high-kappa AlTaOx dielectrics Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL

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