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Institution Date Title Author
國立中山大學 2007 Energy relaxation of InN thin films D.J. Jang;G.T. Lin;C.L. Wu;C.L. Hsiao;L.W. Tu;M.E. Lee
國立臺灣海洋大學 2006-01 Local Oxidation of InN and GaN Using Atomic Force Microscopy J. S. Hwang;Z. S. Hu;Z. Y. You;T. Y. Lin;C. L. Hsiao;L. W. Tu
國立中山大學 2006 Local Oxidation of InN and GaN Using an Atomic Force Microscope J.S. Hwang;Z.S. Hu;Z.Y. You;T.Y. Lin;C.L. Hsiao;L.W. Tu
國立中山大學 2006 GaN nanorod assemblies on self-implanted (111) Si substrates H.W. Seo;Q.Y. Chen;L.W. Tu;C.L. Hsiao;Y.J. Tu;X.M. Wang;O. Lazano;W.K. Chu
國立中山大學 2006 Epitaxial GaN nanorods free from strain and luminescent defects H.W. Seo;Q.Y. Chen;M.N. Iliev;L.W. Tu;C.L. Hsiao;J.K. Mean;W.K. Chu
國立中山大學 2006 Unintentionally doped InN grown onto atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy K.R. Wang;L.W. Tu;S.J. Lin;Y.L. Chen;Z.W. Jiang;M. Chen;C.L. Hsiao;K.H. Cheng;J.W. Yeh;S.K. Chen
國立中山大學 2006 Reply to Comments on “Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures” I. Lo;J.K. Tsai;W.J. Yao;P.C. Ho;L.W. Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學 2006 Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy C.L. Hsiao;L.W. Tu;T.W. Chi;H.W. Seo;Q.Y. Chen;W.K. Chu
國立中山大學 2006 Electrostatic and structural properties of GaN nanorods/nanowires from first-principles M.H. Tsai;Z.F. Jhang;J.Y. Jiang;Y.H. Tang;L.W. Tu
國立中山大學 2006 The electrostatic and structural properties of GaN nanorods/nanowires from first-principles M.H. Tsai;Z.F. Jhang;J.Y. Jiang;Y.H. Tang;L.W. Tu

Showing items 21-30 of 93  (10 Page(s) Totally)
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