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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T05:58:51Z |
Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
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Liu, C.W.;St. Amour, A.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.;Magee, C.W.;Eaglesham, D.; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:58:51Z |
Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates
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Liu, C.W.;St. Amour, A.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.;Magee, C.W.;Eaglesham, D.; Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:46Z |
Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition
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Liu, C.W.;Amour, A.St.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T05:23:46Z |
Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition
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Liu, C.W.;Amour, A.St.;Sturm, J.C.;Lacroix, Y.R.J.;Thewalt, M.L.W.; Liu, C.W.; Amour, A.St.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:30Z |
Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition
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Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:55:30Z |
Growth and band gap of strained 〈110〉 Si1-xGe x layers on silicon substrates by chemical vapor deposition
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Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU |
Showing items 1-6 of 6 (1 Page(s) Totally)
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