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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立成功大學 |
2016-01 |
AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate
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Lin, Jyun-Hao; Huang, Shyh-Jer; Lai, Chao-Hsing; Su, Yan-Kuin |
| 國立成功大學 |
2016-01 |
Normally-off AlGaN/GaN high-electron-mobility transistor on Si(111) by recessed gate and fluorine plasma treatment
|
Lin, Jyun-Hao; Huang, Shyh-Jer; Lai, Chao-Hsing; Su, Yan-Kuin |
| 國立成功大學 |
2015-11-01 |
Performance improvement of GaN-based HEMT grown on silicon (111) substrate by inserting low temperature AlN layer
|
Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Lai, Chao-Hsing |
| 國立成功大學 |
2014-07-17 |
以有機金屬化學氣相沉積法磊晶成長氮化鎵系列高電子遷移率電晶體於矽基板之研製
|
賴朝興; Lai, Chao-Hsing |
| 國立成功大學 |
2014-07-09 |
以有機金屬化學氣相沉積法磊晶成長氮化鎵系列高電子遷移率電晶體於矽基板之研製
|
賴朝興; Lai, Chao-Hsing |
Showing items 1-5 of 5 (1 Page(s) Totally)
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