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Showing items 1-20 of 20 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:48Z |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
|
Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:48:53Z |
Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
|
Chen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel mesh
|
Chen, YA; Hsu, ML; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:40:38Z |
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
|
Kuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:40:12Z |
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
|
Hsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:31Z |
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
|
Kuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:09Z |
As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity
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Laih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC |
| 國立交通大學 |
2014-12-08T15:38:47Z |
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
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Lai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:37:18Z |
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
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Lai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC |
| 國立交通大學 |
2014-12-08T15:37:15Z |
Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
|
Chang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:26:06Z |
Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasers
|
Lu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
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Chang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
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Lai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:45Z |
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
|
Chang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:25:16Z |
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
|
Kuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP |
| 國立交通大學 |
2014-12-08T15:16:36Z |
A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layer
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Huang, HW; Kao, CC; Chang, YA; Kuo, HC; Laih, LH; Wang, SC |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
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Chen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:53Z |
Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions
|
Jen, TS; Shin, NF; Laih, LH; Chen, YA; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:47Z |
Porous silicon light-emitting diode with tunable color
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Chen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:01:29Z |
Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layer
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Chen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY |
Showing items 1-20 of 20 (1 Page(s) Totally)
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