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Institution Date Title Author
國立交通大學 2019-04-02T06:00:18Z Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY
國立交通大學 2014-12-08T15:18:06Z Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY
國立交通大學 2014-12-08T15:16:58Z Improved reliability of HfO2/SiON gate stack by fluorine incorporation Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY

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