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Institution Date Title Author
國立臺灣大學 1999-01 S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen
國立臺灣大學 1999 The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai
臺大學術典藏 1999 S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen

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