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Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立臺灣大學 |
1999-01 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
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Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
國立臺灣大學 |
1999 |
The effect of gate recess profile on device performance ofGa0.51In0.49P/In0.2Ga0.8Asdoped-channel FET's
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Lu, Shey-Shi; Meng, Chin-Chun; Lin, Yo-Sheng; Lan, Hai |
臺大學術典藏 |
1999 |
S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices
|
Lan-Hai;Lin, Yo-Sheng;Lu, Shey-Shi;Chang, Pei-Zen; Lin, Yo-Sheng; Lu, Shey-Shi; Lan-Hai; Chang, Pei-Zen |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
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