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Showing items 1-15 of 15 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:34Z |
Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric
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Lan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:22Z |
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
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Lee, HJ; Lin, EK; Wu, WL; Fanconi, BM; Lan, JK; Cheng, YL; Liou, HC; Wang, YL; Feng, MS; Chao, CG |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
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Cheng, YL; Wang, YL; Liu, CW; Wu, YL; Lo, KY; Liu, CP; Lan, JK |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Integration of MOCVD titanium nitride with collimated titanium and ion metal plasma titanium for 0.18-mu m logic process
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Lan, JK; Wang, YL; Lo, KY; Liu, CP; Liu, CW; Wang, JK; Cheng, YL; Chau, CG |
| 國立交通大學 |
2014-12-08T15:40:43Z |
Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
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Lan, JK; Wang, YL; Chao, CG; Lo, K; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:27Z |
Mechanisms of circular defects for shallow trench isolation oxide deposition
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Lan, JK; Wang, YL; Liu, CP; Chao, CG; Ay, CY; Liu, CW; Cheng, YL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:44Z |
Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization
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Cheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material
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Cheng, YL; Wang, YL; Wu, YL; Liu, CP; Liu, CW; Lan, JK; O'Neil, ML; Ay, C; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Monitor and eliminate the circular defects in HDP-STI deposition through oxynitride/oxide composite liner
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Lan, JK; Wang, YL; Liu, CP; Lee, WH; Ay, C; Cheng, YL; Chang, SC |
| 國立交通大學 |
2014-12-08T15:38:56Z |
Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application
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Cheng, YL; Wang, YL; Lan, JK; Wu, SA; Chang, SC; Lo, KY; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:18:02Z |
Equivalence of buddy networks with arbitrary number of stages
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Chen, CY; Hwang, FK; Lan, JK |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, YL; Lan, JK; Hwang, GJ; O'Neil, ML; Chen, CF |
| 國立暨南國際大學 |
2004 |
Mechanism of high density plasma chemical vapor deposition phosphosilicate glass process without in-situ plasma chamber clean
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藍錦坤?; Lan, JK |
Showing items 1-15 of 15 (1 Page(s) Totally)
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