|
English
|
正體中文
|
简体中文
|
2806795
|
|
???header.visitor??? :
26466343
???header.onlineuser??? :
584
???header.sponsordeclaration???
|
|
|
???tair.name??? >
???browser.page.title.author???
|
"lan wt"???jsp.browse.items-by-author.description???
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2019-04-02T06:00:18Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
|
Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
國立交通大學 |
2014-12-08T15:18:06Z |
Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment
|
Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY |
國立交通大學 |
2014-12-08T15:16:58Z |
Improved reliability of HfO2/SiON gate stack by fluorine incorporation
|
Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
|