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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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HAO-HSIUNG LIN; Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H. |
| 臺大學術典藏 |
2020-06-11T06:23:08Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
|
Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H.; SI-CHEN LEE |
| 臺大學術典藏 |
2018-09-10T06:31:23Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H.; CHEE-WEE LIU |
| 國立臺灣大學 |
1988 |
The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source
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劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; 林浩雄; 劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1988 |
The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source
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Chen, S. L.; Lay, J. P.; 李嗣涔; 劉志文; Lin, Hao-Hsiung; 劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; 林浩雄; 劉志文; Chen, S. L.; Lay, J. P.; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1987 |
The Characteristics of Silane Doping of GaAs by MOCVD
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劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; 林浩雄; 劉志文; Chen, S. L.; Lay, J. P.; 李嗣涔; Lin, Hao-Hsiung |
Showing items 1-6 of 6 (1 Page(s) Totally)
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